component
BMW80N180C1
Public Made by Adomby adom
Bestirpower MOSFETs, TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BMW80N180C1
Bestirpower · MOSFETs · TO-247-3L
BMW80N180C1 from Bestirpower, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±30 V absolute maximum, with threshold of 2.5 to 4.5 V at ID = 250 µA. |
| 2 | D | passive | Drain; 800 V drain-to-source voltage rating, 23 A continuous at TC = 25 ℃ and 70 A pulsed. |
| 3 | S | passive | Source; continuous body-diode forward current of 23 A and 70 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 800 | V | VGS = 0 V, ID = 250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 800 V, VGS = 0 V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30 V, VDS = 0 V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VGS = VDS, ID = 250μA | 2 | |
| Static Drain to Source On Resistance | RDS(on) | 150 | 180 | mΩ | VGS = 10 V, ID = 12 A, Tj = 25℃ | 2 | |
| Drain to Source Voltage | VDSS | 800 | V | TC = 25℃ | 1 | ||
| Gate to Source Voltage | VGSS | -30 | 30 | V | TC = 25℃ | 1 | |
| Continuous Drain Current | ID | 23 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 10 | A | TC = 125℃ | 1 | ||
| Drain Current Pulsed | IDM | 70 | A | TC = 25℃ | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 845 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 | ||
| Avalanche Current | IAR | 13 | A | TC = 25℃ | 1 | ||
| MOSFET dv/dt | dv/dt | 50 | V/ns | TC = 25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | VDClink=400V; VDS,peak<V(BR)DSS | 1 | ||
| Power Dissipation | PD | 250 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | ℃ | 1/8” from Case for 10 Seconds | 1 | ||
| Continuous diode forward current | IS | 23 | A | 1 | |||
| Diode pulse current | IS,pulse | 70 | A | 1 | |||
| Thermal Resistance, Junction to Case | RθJC | 0.5 | ℃/W | Max. | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | ℃/W | Max. | 1 | ||
| Input Capacitance | Ciss | 2440 | pF | VDS = 100 V, VGS = 0 V, f = 250 kHz | 2 | ||
| Output Capacitance | Coss | 83 | pF | VDS = 100 V, VGS = 0 V, f = 250 kHz | 2 | ||
| Time Related Output Capacitance | Co(tr) | 214 | pF | VDS = 0 to 500 V, VGS = 0 V | 2 | ||
| Energy Related Output Capacitance | Co(er) | 66 | pF | VDS = 0 to 500 V, VGS = 0 V | 2 | ||
| Total Gate Charge at 10 V | Qg(tot) | 56 | nC | VDS = 640 V, ID = 24 A, VGS = 0 to10 V | 2 | ||
| Gate Charge total | Qgs | 15 | nC | VDS = 640 V, ID = 24 A, VGS = 0 to10 V | 2 | ||
| Gate to Drain Miller Charge | Qgd | 21 | nC | VDS = 640 V, ID = 24 A, VGS = 0 to10 V | 2 | ||
| Gate Resistance | RG | 4 | Ω | f = 1 MHz | 2 | ||
| Gate plateau voltage | Vplateau | 5.5 | V | 2 | |||
| Turn-On Delay Time | td(on) | 20 | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 | ||
| Turn-On Rise Time | tr | 13 | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 | ||
| Turn-Off Delay Time | td(off) | 117 | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 | ||
| Turn-Off Fall Time | tf | 12 | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 | ||
| Peak reverse recovery current | Irrm | 29 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.8 | V | VGS = 0 V, IF = 12A, Tf = 25℃ | 2 | ||
| Reverse Recovery Time | trr | 375 | ns | VR = 60 V, IF = 24 A, diF/dt = 100 A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 6.7 | μC | VR = 60 V, IF = 24 A, diF/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
BMW80N180C1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
bmw80n180c1-etched.step/bmw80n180c1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bmw80n180c1.step/bmw80n180c1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (8 pp, sha256
8de13040437c8bdd, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BMW80N180C1
**Bestirpower** · MOSFETs · TO-247-3L
BMW80N180C1 from Bestirpower, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±30 V absolute maximum, with threshold of 2.5 to 4.5 V at ID = 250 µA. |
| 2 | D | passive | Drain; 800 V drain-to-source voltage rating, 23 A continuous at TC = 25 ℃ and 70 A pulsed. |
| 3 | S | passive | Source; continuous body-diode forward current of 23 A and 70 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 800 | | | V | VGS = 0 V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS = 800 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±30 V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 2.5 | | 4.5 | V | VGS = VDS, ID = 250μA | 2 |
| Static Drain to Source On Resistance | RDS(on) | | 150 | 180 | mΩ | VGS = 10 V, ID = 12 A, Tj = 25℃ | 2 |
| Drain to Source Voltage | VDSS | | | 800 | V | TC = 25℃ | 1 |
| Gate to Source Voltage | VGSS | -30 | | 30 | V | TC = 25℃ | 1 |
| Continuous Drain Current | ID | | | 23 | A | TC = 25℃ | 1 |
| Continuous Drain Current | ID | | | 10 | A | TC = 125℃ | 1 |
| Drain Current Pulsed | IDM | | | 70 | A | TC = 25℃ | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 845 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 |
| Avalanche Current | IAR | | | 13 | A | TC = 25℃ | 1 |
| MOSFET dv/dt | dv/dt | | | 50 | V/ns | TC = 25℃ | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 50 | V/ns | VDClink=400V; VDS,peak<V(BR)DSS | 1 |
| Power Dissipation | PD | | | 250 | W | TC = 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Maximum Lead Temperature for Soldering | TL | | | 260 | ℃ | 1/8” from Case for 10 Seconds | 1 |
| Continuous diode forward current | IS | | | 23 | A | | 1 |
| Diode pulse current | IS,pulse | | | 70 | A | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 0.5 | ℃/W | Max. | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62 | ℃/W | Max. | 1 |
| Input Capacitance | Ciss | | 2440 | | pF | VDS = 100 V, VGS = 0 V, f = 250 kHz | 2 |
| Output Capacitance | Coss | | 83 | | pF | VDS = 100 V, VGS = 0 V, f = 250 kHz | 2 |
| Time Related Output Capacitance | Co(tr) | | 214 | | pF | VDS = 0 to 500 V, VGS = 0 V | 2 |
| Energy Related Output Capacitance | Co(er) | | 66 | | pF | VDS = 0 to 500 V, VGS = 0 V | 2 |
| Total Gate Charge at 10 V | Qg(tot) | | 56 | | nC | VDS = 640 V, ID = 24 A, VGS = 0 to10 V | 2 |
| Gate Charge total | Qgs | | 15 | | nC | VDS = 640 V, ID = 24 A, VGS = 0 to10 V | 2 |
| Gate to Drain Miller Charge | Qgd | | 21 | | nC | VDS = 640 V, ID = 24 A, VGS = 0 to10 V | 2 |
| Gate Resistance | RG | | 4 | | Ω | f = 1 MHz | 2 |
| Gate plateau voltage | Vplateau | | 5.5 | | V | | 2 |
| Turn-On Delay Time | td(on) | | 20 | | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 |
| Turn-On Rise Time | tr | | 13 | | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 |
| Turn-Off Delay Time | td(off) | | 117 | | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 |
| Turn-Off Fall Time | tf | | 12 | | ns | VDS = 400 V, ID = 12 A, VGS = 10 V | 2 |
| Peak reverse recovery current | Irrm | | 29 | | A | | 2 |
| Diode Forward Voltage | VSD | | 0.8 | | V | VGS = 0 V, IF = 12A, Tf = 25℃ | 2 |
| Reverse Recovery Time | trr | | 375 | | ns | VR = 60 V, IF = 24 A, diF/dt = 100 A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 6.7 | | μC | VR = 60 V, IF = 24 A, diF/dt = 100 A/μs | 2 |
## CAD (KiCad official)
- Symbol: `BMW80N180C1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files: `bmw80n180c1-etched.step` / `bmw80n180c1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bmw80n180c1.step` / `bmw80n180c1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Bestirpower datasheet](docs/bmw80n180c1-datasheet.pdf) (8 pp, sha256 `8de13040437c8bdd`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bmw80n180c1-datasheet.pdf)