component
BMW65N100UC1
Public Made by Adomby adom
Bestirpower MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BMW65N100UC1
Bestirpower · MOSFETs · TO-247-3
BMW65N100UC1 from Bestirpower, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet rates gate-to-source voltage at ±30 V max and gate leakage at ±100 nA max (VGS = ±30 V). |
| 2 | D | passive | Drain, also connected to the mounting tab; the datasheet rates drain-to-source voltage at 650 V max and continuous drain current at 35 A (TC = 25℃). |
| 3 | S | passive | Source; the datasheet rates continuous diode forward current at 35 A and pulsed diode current at 105 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 650 V, VGS = 0 V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30V, VDS = 0 V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3.5 | 4 | 4.5 | V | VGS = VDS, ID = 1 mA | 2 |
| Static Drain to Source On Resistance | RDS(on) | 82 | 100 | mΩ | VGS = 10 V, ID = 18A, TJ=25℃ | 2 | |
| Drain to Source Voltage | VDSS | 650 | V | TC = 25℃ | 1 | ||
| Gate to Source Voltage | VGSS | -30 | 30 | V | TC = 25℃ | 1 | |
| Drain Current Continuous | ID | 35 | A | TC = 25℃ | 1 | ||
| Drain Current Continuous | ID | 22 | A | TC = 100℃ | 1 | ||
| Drain Current Pulsed | IDM | 105 | A | TC = 25℃ | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 750 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | TC = 25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | TC = 25℃ | 1 | ||
| Power Dissipation | PD | 278 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Continuous diode forward current | Is | 35 | A | TC = 25℃ | 1 | ||
| Diode pulse current | Is | 105 | A | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.45 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | ℃/W | 1 | |||
| Soldering temperature | Tsold | 260 | ℃ | wavesoldering only allowed at leads | 1 | ||
| Input Capacitance | Ciss | 2990 | pF | VGS=0V, VDS=50V, f=250KHz | 2 | ||
| Output Capacitance | Coss | 141 | pF | VGS=0V, VDS=50V, f=250KHz | 2 | ||
| Time Related Output Capacitance | Co(tr) | 452 | pF | VDS = 0 to 400 V, VGS = 0 V | 2 | ||
| Energy Related Output Capacitance | Co(er) | 88 | pF | VDS = 0 to 400 V, VGS = 0 V | 2 | ||
| Reverse transfer capacitance | Crss | 5.8 | pF | VGS=0V, VDS=50V, f=250KHz | 2 | ||
| Total Gate Charge at 10 V | Qg(tot) | 66 | nC | VDD = 400 V, ID = 18A, VGS = 0 to 10 V | 2 | ||
| Gate to Source Charge | Qgs | 20 | nC | VDD = 400 V, ID = 18A, VGS = 0 to 10 V | 2 | ||
| Gate to Drain Miller Charge | Qgd | 25 | nC | VDD = 400 V, ID = 18A, VGS = 0 to 10 V | 2 | ||
| Gate plateau voltage | Vplateau | 6.1 | V | 2 | |||
| Gate Resistance | RG | 2.7 | Ω | f = 1 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 21 | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 | ||
| Turn-On Rise Time | tr | 19 | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 | ||
| Turn-Off Delay Time | td(off) | 76 | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 | ||
| Turn-Off Fall Time | tf | 8 | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 | ||
| Diode Forward Voltage | VSD | 0.88 | V | VGS = 0 V, IF=18A, TJ=25℃ | 2 | ||
| Reverse Recovery Time | trr | 140 | ns | VR = 400 V, IF = 18 A, diF/dt = 100 A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 1.15 | μC | VR = 400 V, IF = 18 A, diF/dt = 100 A/μs | 2 | ||
| Peak reverse recovery current | Imm | 15 | A | VR = 400 V, IF = 18 A, diF/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
BMW65N100UC1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
bmw65n100uc1-etched.step/bmw65n100uc1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bmw65n100uc1.step/bmw65n100uc1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (8 pp, sha256
701ae5bda11f9c38, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BMW65N100UC1
**Bestirpower** · MOSFETs · TO-247-3
BMW65N100UC1 from Bestirpower, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet rates gate-to-source voltage at ±30 V max and gate leakage at ±100 nA max (VGS = ±30 V). |
| 2 | D | passive | Drain, also connected to the mounting tab; the datasheet rates drain-to-source voltage at 650 V max and continuous drain current at 35 A (TC = 25℃). |
| 3 | S | passive | Source; the datasheet rates continuous diode forward current at 35 A and pulsed diode current at 105 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0 V, ID = 1 mA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | μA | VDS = 650 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS = ±30V, VDS = 0 V | 2 |
| Gate Threshold Voltage | VGS(th) | 3.5 | 4 | 4.5 | V | VGS = VDS, ID = 1 mA | 2 |
| Static Drain to Source On Resistance | RDS(on) | | 82 | 100 | mΩ | VGS = 10 V, ID = 18A, TJ=25℃ | 2 |
| Drain to Source Voltage | VDSS | | | 650 | V | TC = 25℃ | 1 |
| Gate to Source Voltage | VGSS | -30 | | 30 | V | TC = 25℃ | 1 |
| Drain Current Continuous | ID | | | 35 | A | TC = 25℃ | 1 |
| Drain Current Continuous | ID | | | 22 | A | TC = 100℃ | 1 |
| Drain Current Pulsed | IDM | | | 105 | A | TC = 25℃ | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 750 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 |
| MOSFET dv/dt ruggedness | dv/dt | | | 50 | V/ns | TC = 25℃ | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 50 | V/ns | TC = 25℃ | 1 |
| Power Dissipation | PD | | | 278 | W | TC = 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Continuous diode forward current | Is | | | 35 | A | TC = 25℃ | 1 |
| Diode pulse current | Is | | | 105 | A | TC = 25℃ | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 0.45 | ℃/W | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 62 | ℃/W | | 1 |
| Soldering temperature | Tsold | | | 260 | ℃ | wavesoldering only allowed at leads | 1 |
| Input Capacitance | Ciss | | 2990 | | pF | VGS=0V, VDS=50V, f=250KHz | 2 |
| Output Capacitance | Coss | | 141 | | pF | VGS=0V, VDS=50V, f=250KHz | 2 |
| Time Related Output Capacitance | Co(tr) | | 452 | | pF | VDS = 0 to 400 V, VGS = 0 V | 2 |
| Energy Related Output Capacitance | Co(er) | | 88 | | pF | VDS = 0 to 400 V, VGS = 0 V | 2 |
| Reverse transfer capacitance | Crss | | 5.8 | | pF | VGS=0V, VDS=50V, f=250KHz | 2 |
| Total Gate Charge at 10 V | Qg(tot) | | 66 | | nC | VDD = 400 V, ID = 18A, VGS = 0 to 10 V | 2 |
| Gate to Source Charge | Qgs | | 20 | | nC | VDD = 400 V, ID = 18A, VGS = 0 to 10 V | 2 |
| Gate to Drain Miller Charge | Qgd | | 25 | | nC | VDD = 400 V, ID = 18A, VGS = 0 to 10 V | 2 |
| Gate plateau voltage | Vplateau | | 6.1 | | V | | 2 |
| Gate Resistance | RG | | 2.7 | | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 21 | | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 |
| Turn-On Rise Time | tr | | 19 | | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 |
| Turn-Off Delay Time | td(off) | | 76 | | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 |
| Turn-Off Fall Time | tf | | 8 | | ns | VDD = 400 V, ID = 18A, VGS = 10 V | 2 |
| Diode Forward Voltage | VSD | | 0.88 | | V | VGS = 0 V, IF=18A, TJ=25℃ | 2 |
| Reverse Recovery Time | trr | | 140 | | ns | VR = 400 V, IF = 18 A, diF/dt = 100 A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 1.15 | | μC | VR = 400 V, IF = 18 A, diF/dt = 100 A/μs | 2 |
| Peak reverse recovery current | Imm | | 15 | | A | VR = 400 V, IF = 18 A, diF/dt = 100 A/μs | 2 |
## CAD (KiCad official)
- Symbol: `BMW65N100UC1`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `bmw65n100uc1-etched.step` / `bmw65n100uc1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bmw65n100uc1.step` / `bmw65n100uc1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Bestirpower datasheet](docs/bmw65n100uc1-datasheet.pdf) (8 pp, sha256 `701ae5bda11f9c38`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bmw65n100uc1-datasheet.pdf)