component
BMW60N076UC1
Public Made by Adomby adom
Bestirpower MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 18d ago |
| viewers | 18d ago |
| bmw60n076uc1-etched.glb | 18d ago |
| bmw60n076uc1-etched.step | 18d ago |
| bmw60n076uc1-hero.glb | 4h ago |
| bmw60n076uc1-hero.overlay.json | 4h ago |
| bmw60n076uc1.glb | 18d ago |
| bmw60n076uc1.kicad_mod | 18d ago |
| bmw60n076uc1.kicad_sym | 18d ago |
| bmw60n076uc1.lbr | 18d ago |
| bmw60n076uc1.step | 18d ago |
| package.json | 4h ago |
| page.json | 4h ago |
| README.md | 18d ago |
BMW60N076UC1
Bestirpower · MOSFETs · TO-247-3
BMW60N076UC1 from Bestirpower, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±30 V, with a threshold of 3.0 to 5.0 V at ID = 1 mA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated 600 V, with continuous current of 52 A at TC = 25℃ and 155 A pulsed. |
| 3 | S | passive | Source, connected to the body diode anode; carries the same 52 A continuous current as the drain at TC = 25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 600 V, VGS = 0 V, TJ = 25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30 V, VDS = 0 V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3 | 4 | 5 | V | VGS = VDS , ID = 1 mA | 2 |
| Static Drain to Source On Resistance | RDS(on) | 70 | 76 | mΩ | VGS = 10 V, ID = 23 A, TJ = 25℃ | 2 | |
| Drain to Source Voltage | VDSS | 600 | V | TC = 25℃ | 1 | ||
| Gate to Source Voltage | VGSS | -30 | 30 | V | TC = 25℃ | 1 | |
| Drain Current Continuous | ID | 52 | A | Continuous (TC = 25℃) | 1 | ||
| Drain Current Pulsed | IDM | 155 | A | TC = 25℃ | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 625 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 | ||
| Avalanche Current | IAR | 5 | A | TC = 25℃ | 1 | ||
| MOSFET dv/dt | dv/dt | 50 | V/ns | MOSFET dv/dt | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 260 | ℃ | 1/8” from Case for 10 Seconds | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.25 | ℃/W | Max. | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | ℃/W | Max. | 1 | ||
| Input Capacitance | Ciss | 3440 | pF | VGS = 0 V, VDS = 50V, f = 250 kHz | 2 | ||
| Output Capacitance | Coss | 162 | pF | VGS = 0 V, VDS = 50V, f = 250 kHz | 2 | ||
| Reverse transfer capacitance | Crss | 7 | pF | VGS = 0 V, VDS = 50V, f = 250 kHz | 2 | ||
| Time Related Output Capacitance | Co(tr) | 557 | pF | VDS = 0 V to 400 V, VGS = 0 V | 2 | ||
| Energy Related Output Capacitance | Co(er) | 107 | pF | VDS = 0 V to 400 V, VGS = 0 V | 2 | ||
| Total Gate Charge at 10 V | Qg(tot) | 80 | nC | VDD= 400 V, ID = 23 A, VGS = 0 to 10 V | 2 | ||
| Gate to Source Charge | Qgs | 19 | nC | VDD= 400 V, ID = 23 A, VGS = 0 to 10 V | 2 | ||
| Gate to Drain Miller Charge | Qgd | 34 | nC | VDD= 400 V, ID = 23 A, VGS = 0 to 10 V | 2 | ||
| Gate plateau voltage | Vplateau | 6 | V | VDD= 400 V, ID = 23 A, VGS = 0 to 10 V | 2 | ||
| Turn-On Delay Time | td(on) | 85 | ns | VDD = 400 V, ID = 23 A, VGS = 10 V | 2 | ||
| Turn-On Rise Time | tr | 14 | ns | VDD = 400 V, ID = 23 A, VGS = 10 V | 2 | ||
| Turn-Off Delay Time | td(off) | 130 | ns | VDD = 400 V, ID = 23 A, VGS = 10 V | 2 | ||
| Turn-Off Fall Time | tf | 14 | ns | VDD = 400 V, ID = 23 A, VGS = 10 V | 2 | ||
| Diode Forward Voltage | VSD | 0.89 | V | VGS = 0 V, IF = 23 A, Tf= 25℃ | 2 | ||
| Reverse Recovery Time | trr | 145 | ns | VR = 400 V, IF = 23 A, diF/dt = 100 A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 1.15 | μC | VR = 400 V, IF = 23 A, diF/dt = 100 A/μs | 2 | ||
| Peak reverse recovery current | Irmm | 14 | A | VR = 400 V, IF = 23 A, diF/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
BMW60N076UC1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
bmw60n076uc1-etched.step/bmw60n076uc1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bmw60n076uc1.step/bmw60n076uc1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (8 pp, sha256
4394414255833f99, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).