component
BMW60N026UC1
Public Made by Adomby adom
Bestirpower MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| bmw60n026uc1-etched.glb | 23d ago |
| bmw60n026uc1-etched.step | 23d ago |
| bmw60n026uc1-hero.glb | 23d ago |
| bmw60n026uc1-hero.overlay.json | 23d ago |
| bmw60n026uc1.glb | 23d ago |
| bmw60n026uc1.kicad_mod | 23d ago |
| bmw60n026uc1.kicad_sym | 23d ago |
| bmw60n026uc1.lbr | 23d ago |
| bmw60n026uc1.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
BMW60N026UC1
Bestirpower · MOSFETs · TO-247-3
BMW60N026UC1 from Bestirpower, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±30 V, with threshold of 3.0 to 4.5 V at ID = 2 mA. |
| 2 | D | passive | Drain (also connected to the mounting tab); drain-to-source voltage rated 600 V with 102 A continuous current at TC = 25℃. |
| 3 | S | passive | Source; continuous body-diode forward current 102 A and pulsed 300 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Bestirpower |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 600 | V | 1 | |||
| Gate to Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current, continuous | ID | 102 | A | TC = 25℃ | 1 | ||
| Drain Current, continuous | ID | 51 | A | TC = 125℃ | 1 | ||
| Drain Current, pulsed | IDM | 350 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 2025 | mJ | VDD=50V, RG=25Ω, Starting Tj=25°C | 1 | ||
| MOSFET dv/dt | dv/dt | 50 | V/ns | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 50 | V/ns | VDClink=400V; VDS,peak<V(BR)DSS | 1 | ||
| Power Dissipation | PD | 625 | W | TC = 25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Continuous diode forward current | Is | 102 | A | 1 | |||
| Pulse diode pulse current | Is | 300 | A | 1 | |||
| Soldering temperature, wavesoldering | Tsold | 260 | ℃ | wavesoldering only allowed at leads | 1 | ||
| Thermal Resistance, Junction to Case, Max. | RθJC | 0.2 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient, Max. | RθJA | 62 | ℃/W | 1 | |||
| Drain to Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 600 V, VGS = 0 V, Tj=25°C | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30 V, VDS = 0 V | 2 | |
| Gate Threshold Voltage | V(GS)th | 3 | 4.5 | V | VGS = VDS, ID = 2 mA | 2 | |
| Static Drain to Source On Resistance | RDS(on) | 23 | 26 | mΩ | VGS = 10 V, ID = 40 A, Tj=25°C | 2 |
CAD (KiCad official)
- Symbol:
BMW60N026UC1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
bmw60n026uc1-etched.step/bmw60n026uc1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bmw60n026uc1.step/bmw60n026uc1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Bestirpower datasheet (8 pp, sha256
e3bef2b4a1657142, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).