component
BM8205
Public Made by Adomby adom
BORN MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BM8205
BORN · MOSFETs · SOT-23-6L
BM8205 from BORN, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 20V, ID 4.0A at TA=25°C). |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, tied together internally (VDS 20V, ID 4.0A at TA=25°C). |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 20V, ID 4.0A at TA=25°C). |
| 4 | G2 | input | Gate of MOSFET 2, VGS limit ±12V, threshold 0.5V min to 1.2V max at 250µA. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, tied together internally (VDS 20V, ID 4.0A at TA=25°C). |
| 6 | G1 | input | Gate of MOSFET 1, VGS limit ±12V, threshold 0.5V min to 1.2V max at 250µA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source on-state resistance (VGS=4.5V, ID=4.0A) | RDS(ON) | 22 | 26 | mΩ | VGS=4.5V, ID=4.0A | 2 | |
| Drain-source on-state resistance (VGS=2.5V, ID=3.0A) | RDS(ON) | 28 | 35 | mΩ | VGS=2.5V, ID=3.0A | 2 | |
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=20V, VGS=0V | 2 | ||
| Drain-source breakdown voltage | BVDSS | 20 | V | VGS=0V, ID=250µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Diode forward voltage | VSD | 0.76 | 1.16 | V | VGS=0V, Is=2A | 2 | |
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | 4 | A | TA=25°C (TJ = 150 °C) | 1 | ||
| Continuous drain current | ID | 3 | A | TA=70°C (TJ = 150 °C) | 1 | ||
| Pulsed drain current | IDM | 20 | A | 1 | |||
| Continuous source current (diode conduction) | IS | 1.2 | A | 1 | |||
| Power dissipation | PD | 1.4 | W | TA=25°C | 1 | ||
| Power dissipation | PD | 0.9 | W | TA=70°C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum junction-to-ambient thermal resistance | RθJA | 70 | 90 | ℃/W | ≤ 10 s, surface mounted on 1in x 1in FR4 board | 2 | |
| Maximum junction-to-ambient thermal resistance | RθJA | 100 | 125 | ℃/W | Steady-State, surface mounted on 1in x 1in FR4 board | 2 | |
| Maximum junction-to-foot thermal resistance | RθJC | 63 | 80 | ℃/W | Steady-State | 2 |
CAD (KiCad official)
- Symbol:
BM8205 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
bm8205-etched.step/bm8205-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bm8205.step/bm8205.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BORN datasheet (3 pp, sha256
af39d22eb848b605, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BM8205
**BORN** · MOSFETs · SOT-23-6L
BM8205 from BORN, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, VDS 20V, ID 4.0A at TA=25°C). |
| 2 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, tied together internally (VDS 20V, ID 4.0A at TA=25°C). |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel, VDS 20V, ID 4.0A at TA=25°C). |
| 4 | G2 | input | Gate of MOSFET 2, VGS limit ±12V, threshold 0.5V min to 1.2V max at 250µA. |
| 5 | D1/D2 | passive | Common drain of MOSFET 1 and MOSFET 2, tied together internally (VDS 20V, ID 4.0A at TA=25°C). |
| 6 | G1 | input | Gate of MOSFET 1, VGS limit ±12V, threshold 0.5V min to 1.2V max at 250µA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | SOT-23-6L |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source on-state resistance (VGS=4.5V, ID=4.0A) | RDS(ON) | | 22 | 26 | mΩ | VGS=4.5V, ID=4.0A | 2 |
| Drain-source on-state resistance (VGS=2.5V, ID=3.0A) | RDS(ON) | | 28 | 35 | mΩ | VGS=2.5V, ID=3.0A | 2 |
| Gate-body leakage | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=20V, VGS=0V | 2 |
| Drain-source breakdown voltage | BVDSS | 20 | | | V | VGS=0V, ID=250µA | 2 |
| Gate threshold voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS=VGS, ID=250µA | 2 |
| Diode forward voltage | VSD | | 0.76 | 1.16 | V | VGS=0V, Is=2A | 2 |
| Drain-source voltage | VDS | | | 20 | V | | 1 |
| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous drain current | ID | | | 4 | A | TA=25°C (TJ = 150 °C) | 1 |
| Continuous drain current | ID | | | 3 | A | TA=70°C (TJ = 150 °C) | 1 |
| Pulsed drain current | IDM | | | 20 | A | | 1 |
| Continuous source current (diode conduction) | IS | | | 1.2 | A | | 1 |
| Power dissipation | PD | | | 1.4 | W | TA=25°C | 1 |
| Power dissipation | PD | | | 0.9 | W | TA=70°C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum junction-to-ambient thermal resistance | RθJA | | 70 | 90 | ℃/W | ≤ 10 s, surface mounted on 1in x 1in FR4 board | 2 |
| Maximum junction-to-ambient thermal resistance | RθJA | | 100 | 125 | ℃/W | Steady-State, surface mounted on 1in x 1in FR4 board | 2 |
| Maximum junction-to-foot thermal resistance | RθJC | | 63 | 80 | ℃/W | Steady-State | 2 |
## CAD (KiCad official)
- Symbol: `BM8205`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files: `bm8205-etched.step` / `bm8205-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bm8205.step` / `bm8205.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [BORN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590923955165208576) (3 pp, sha256 `af39d22eb848b605`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bm8205-datasheet.pdf)