component

BM3415E

Public Made by Adom

by adom

BORN MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbm3415efactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
bm3415e / README.md
History Download
Ray Initial commit: component/bm3415e 34d2c7c 23d ago

BM3415E

BORN · MOSFETs · SOT-23

BM3415E from BORN, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; P-channel gate with VGS rated ±8 V, -3.3 V logic level drive, and 2 kV HMB ESD protection.
2 S passive Source; connects to the positive supply in a high-side load switch, with continuous drain current up to -4.8 A at TA=25°C.
3 D passive Drain; drain-source breakdown is -20 V, continuous current is -4.8 A, and RDS(ON) is 37 mΩ typ at VGS=-4.5 V.

Key specifications

Parameter Value
Manufacturer BORN
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -8 8 V Common ratings, TA=25°C unless otherwise noted; printed as ±8 1
Maximum Junction Temperature TJ 150 °C Common ratings, TA=25°C unless otherwise noted 1
Storage Temperature Range TSTG -50 150 °C Common ratings, TA=25°C unless otherwise noted 1
Pulse Drain Current (tested) IDM -30 A TA=25°C, mounted on large heat sink 1
Continuous Drain Current ID -4.8 A TA=25°C 1
Continuous Drain Current ID -3.6 A TA=70°C 1
Maximum Power Dissipation PD 1.5 W TA=25°C 1
Maximum Power Dissipation PD 1 W TA=70°C 1
Thermal Resistance Junction-Ambient RθJA 80 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current (TA=25°C) IDSS -1 μA VDS=-20V, VGS=0V 2
Zero Gate Voltage Drain Current (TA=125°C) IDSS -100 uA VDS=-16V, VGS=0V 2
Gate-Body Leakage Current IGSS -10 10 μA VGS=±8V, VDS=0V 2
Gate Threshold Voltage VGS(TH) -0.4 -0.7 -1.2 V VDS=VGS, ID=-250μA 2
Drain-Source On-State Resistance RDS(ON) 37 45 mΩ VGS=-4.5V, ID=-4A 2
Drain-Source On-State Resistance RDS(ON) 43 55 mΩ VGS=-3.3V, ID=-3A 2
Drain-Source On-State Resistance RDS(ON) 52 65 mΩ VGS=-2.5V, ID=-2A 2
Source Drain Current (Body Diode) ISD -2 A TA=25℃ 2
Forward On Voltage VSD -0.83 -1.2 V Tj=25℃, ISD=-2A, VGS=0V 2
Input Capacitance Ciss 675 pF VDS=-10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 120 pF 2
Reverse Transfer Capacitance Crss 85 pF 2
Total Gate Charge Qg 14.2 nC VDS=-10V, ID=-4A, VGS=-4.5V 2
Gate Source Charge Qgs 3.2 nC 2
Gate Drain Charge Qgd 5.8 nC 2
Turn On Delay Time td(on) 15 ns VDD=-10V, ID=-2A, RG=3.3Ω, VGS=-4.5V 2
Turn On Rise Time tr 11 ns 2
Turn Off Delay Time td(off) 22 ns 2
Turn Off Fall Time tf 35 ns 2

CAD (KiCad official)

  • Symbol: BM3415E
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bm3415e-etched.step / bm3415e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bm3415e.step / bm3415e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (4 pp, sha256 0a02494b820e071c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF