component
BLM9435
Public Made by Adomby adom
BL Shanghai Belling MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| blm9435-etched.glb | 7d ago |
| blm9435-etched.step | 7d ago |
| blm9435-hero.glb | 7d ago |
| blm9435-hero.overlay.json | 7d ago |
| blm9435.glb | 7d ago |
| blm9435.kicad_mod | 7d ago |
| blm9435.kicad_sym | 7d ago |
| blm9435.lbr | 7d ago |
| blm9435.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
BLM9435
BL Shanghai Belling · MOSFETs · SOP-8
BLM9435 from BL Shanghai Belling, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, connected to pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET, connected to pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected to pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET, with VGS limited to ±20V and a threshold of -1V to -3V. |
| 5 | D | passive | Drain of the P-channel MOSFET, with VDS up to -30V and continuous ID of -5.1A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected to pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BL Shanghai Belling |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | -5.1 | A | 1 | |||
| Drain Current-Pulsed | IDM | -20 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | -33 | V | VGS=0V ID=-250µA | 1 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-24V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -3 | V | VDS=VGS,ID=-250µA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 48 | 55 | mΩ | VGS=-10V, ID=-5.1A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 73 | 105 | mΩ | VGS=-4.5V, ID=-4.2A | 2 | |
| Forward Transconductance | gFS | 4 | 7 | S | VDS=-15V,ID=-4.5A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-1.7A | 2 |
CAD (KiCad official)
- Symbol:
BLM9435 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
blm9435-etched.step/blm9435-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);blm9435.step/blm9435.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BL Shanghai Belling datasheet (6 pp, sha256
c9d2b66d0fb4e185, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).