component
BLM10P03-D
Public Made by Adomby adom
BL(Shanghai Belling) MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BLM10P03-D
BL(Shanghai Belling) · MOSFETs · TO-252-2L
BLM10P03-D from BL(Shanghai Belling), in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with VGS(th) of -1.0 to -2.4 V at ID=-250 µA. |
| 2 | D | passive | Drain, the exposed tab and middle stub of the package; VDS is -30 V maximum and continuous ID is -40 A (pulsed -160 A). |
| 3 | S | passive | Source; connected to the body diode anode, with diode forward voltage up to -1.2 V at IS=-1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BL(Shanghai Belling) |
| Package | TO-252-2L |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous (TO-252) | ID | -40 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed (TO-252) | IDM | -160 | A | TA=25℃; pulse width limited by max junction temperature | 1 | ||
| Maximum Power Dissipation (TO-252) | PD | 23.2 | W | Tc=25℃ | 2 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance (TO-252) | RθJC | 5.4 | ℃/W | Junction-to-Ambient as printed | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-30V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.4 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 8 | 10 | mΩ | VGS=-10V, ID=-17A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 12 | 15 | mΩ | VGS=-4.5V, ID=-13A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-1 A | 2 | ||
| Forward Transconductance | gFS | 43 | S | VDS=-5V,ID=-17A | 2 | ||
| Input Capacitance | Clss | 2000 | pF | VDS=-15V,VGS=0V,f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 290 | pF | VDS=-15V,VGS=0V,f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 270 | pF | VDS=-15V,VGS=0V,f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 10 | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 8 | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 43 | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 18 | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 36 | nC | VDS=-15V,ID=-17A,VGS=-10V | 2 | ||
| Gate-Source Charge | Qgs | 5.3 | nC | VDS=-15V,ID=-17A,VGS=-10V | 2 | ||
| Gate-Drain Charge | Qgd | 8.8 | nC | VDS=-15V,ID=-17A,VGS=-10V | 2 |
CAD (KiCad official)
- Symbol:
BLM10P03-D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
blm10p03-d-etched.step/blm10p03-d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);blm10p03-d.step/blm10p03-d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BL(Shanghai Belling) datasheet (12 pp, sha256
3596547ef4c134e4, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BLM10P03-D
**BL(Shanghai Belling)** · MOSFETs · TO-252-2L
BLM10P03-D from BL(Shanghai Belling), in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V with VGS(th) of -1.0 to -2.4 V at ID=-250 µA. |
| 2 | D | passive | Drain, the exposed tab and middle stub of the package; VDS is -30 V maximum and continuous ID is -40 A (pulsed -160 A). |
| 3 | S | passive | Source; connected to the body diode anode, with diode forward voltage up to -1.2 V at IS=-1 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BL(Shanghai Belling) |
| Package | TO-252-2L |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | -30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Drain Current-Continuous (TO-252) | ID | | | -40 | A | TA=25℃ | 1 |
| Drain Current-Pulsed (TO-252) | IDM | | | -160 | A | TA=25℃; pulse width limited by max junction temperature | 1 |
| Maximum Power Dissipation (TO-252) | PD | | | 23.2 | W | Tc=25℃ | 2 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance (TO-252) | RθJC | | | 5.4 | ℃/W | Junction-to-Ambient as printed | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-30V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.4 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 8 | 10 | mΩ | VGS=-10V, ID=-17A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 12 | 15 | mΩ | VGS=-4.5V, ID=-13A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-1 A | 2 |
| Forward Transconductance | gFS | | 43 | | S | VDS=-5V,ID=-17A | 2 |
| Input Capacitance | Clss | | 2000 | | pF | VDS=-15V,VGS=0V,f=1.0MHz | 2 |
| Output Capacitance | Coss | | 290 | | pF | VDS=-15V,VGS=0V,f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 270 | | pF | VDS=-15V,VGS=0V,f=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 10 | | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 8 | | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 43 | | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 18 | | nS | VDD=-15V, ID=-17A, VGS=-10V,RGEN=3Ω | 2 |
| Total Gate Charge | Qg | | 36 | | nC | VDS=-15V,ID=-17A,VGS=-10V | 2 |
| Gate-Source Charge | Qgs | | 5.3 | | nC | VDS=-15V,ID=-17A,VGS=-10V | 2 |
| Gate-Drain Charge | Qgd | | 8.8 | | nC | VDS=-15V,ID=-17A,VGS=-10V | 2 |
## CAD (KiCad official)
- Symbol: `BLM10P03-D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `blm10p03-d-etched.step` / `blm10p03-d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `blm10p03-d.step` / `blm10p03-d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [BL(Shanghai Belling) datasheet](docs/blm10p03-d-datasheet.pdf) (12 pp, sha256 `3596547ef4c134e4`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/blm10p03-d-datasheet.pdf)