component

BL817C

Public Made by Adom

by adom

GME(银河微电) Transistor, Photovoltaic Output Optoisolators, DIP-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BL817C

GME(银河微电) · Transistor, Photovoltaic Output Optoisolators · DIP-4L

BL817C from GME(银河微电), in a DIP-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode input LED anode of the input side; forward current IF max 50 mA, peak forward current 1 A, reverse voltage max 6 V.
2 Cathode input LED cathode of the input side; return for the forward current (IF max 50 mA, VF typ 1.2 V at IF = 20 mA).
3 Emitter passive Phototransistor emitter; emitter-collector voltage max 7 V, isolated from the input by 5000 Vrms.
4 Collector passive Phototransistor collector; VCEO max 80 V, collector current max 50 mA, collector power dissipation 150 mW.

Key specifications

Parameter Value
Manufacturer GME(银河微电)
Package DIP-4L
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward Voltage VF 1.2 1.4 V IF = 20mA 3
Peak Forward Voltage VFM 3 V IFM = 0.5A 3
Reverse Current IR 10 μA VR = 4V 3
Input Capacitance Cin 30 250 pF VR = 0V, f = 1kHz 3
Collector-Emitter Dark Current ICEO 100 nA VCE = 20V, IF = 0 3
Collector-Emitter Breakdown Voltage BVCEO 80 V IC = 0.1mA, IF = 0 3
Emitter-Collector Breakdown Voltage BVECO 7 V IE = 10μA, IF = 0 3
Collector Current IC 2.5 30 mA IF = 5mA, VCE = 5V 3
Current Transfer Ratio (Rank C) CTR 200 400 % IF = 5 mA, VCE = 5V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.1 0.2 V IF = 20mA, IC = 1mA 3
Isolation Current Risc 2 μA DC6000V, 40~60% R.H. 3
Floating Capacitance CIO 0.6 1 pF VIO = 0, f = 1MHz 3
Cut-off Frequency fC 80 kHz VCE = 5V, IC = 2mA, RL = 100Ω, -3dB 4
Turn On Time Ton 4 18 μs VCE = 2V, RL = 100Ω, IC = 2mA 4
Turn Off Time Toff 3 18 μs 4
Forward Current IF 50 mA 2
Peak Forward Current IFM 1 A Pulse width≤1μs, Duty ratio: 0.001 2
Reverse Voltage VR 6 V 2
Power Dissipation PD 70 mW 2
Collector Power Dissipation PC 150 mW 2
Collector Current IC 50 mA 2
Collector-Emitter Voltage VCEO 80 V 2
Emitter-Collector Voltage VECO 7 V 2
Total Power Dissipation PTOT 200 mW 3
Isolation Voltage VISO 5000 Vrms 40 to 60% RH, AC for 1 minute 3
Rated Impulse Isolation Voltage VIOTM 6000 V 3
Rated Repetitive Peak Isolation Voltage VIORM 630 V 3
Operating Temperature TOPR -55 110 °C 3
Storage Temperature Range TSTG -55 125 °C 3
Soldering Temperature TSOL 260 °C For 10 seconds 3
Thermal Resistance Junction-to-Air RθJA 430 °C/W 3
Thermal Resistance Junction-to-Case RθJC 350 °C/W 3
Thermal Resistance Junction-to-Lead RθJL 368 °C/W 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: BL817C
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4L (KiCad packages3D, STEP)
  • 3D model files: bl817c-etched.step / bl817c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bl817c.step / bl817c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GME(银河微电) datasheet (10 pp, sha256 1c1769193ac0a53d, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF