main
History Download
Ray Publish 0.1.0 c52e23c 1d ago

BL6N120-A

BL(Shanghai Belling) · MOSFETs · TO-220F

BL6N120-A from BL(Shanghai Belling), in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input of the N-channel MOSFET, limited to ±30 V gate-to-source with a 3.0 to 5.0 V threshold (VDS=VGS, ID=250µA).
2 Drain passive Drain of the N-channel MOSFET, rated 1200 V drain-to-source with 6 A continuous current and 24 A pulsed.
3 Source passive Source of the N-channel MOSFET, connected to the body diode anode, with 6 A continuous body-diode current.

Key specifications

Parameter Value
Manufacturer BL(Shanghai Belling)
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage VDSS 1200 V VGS=0V, ID=250µA 3
Drain to Source Leakage Current (Tj = 25°C) IDSS 10 µA VDS =1200V, VGS= 0V, Tj = 25℃ 3
Drain to Source Leakage Current (Tj = 125°C) IDSS 500 µA VDS =960V, VGS= 0V, Tj = 125℃ 3
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =+30V 3
Gate to Source Reverse Leakage IGSS(R) 100 nA VGS =-30V 3
Gate Threshold Voltage VGS(TH) 3 5 V VDS = VGS, ID = 250µA(Note4) 3
Drain-to-Source On-Resistance RDS(ON) 2.3 2.9 Ω VGS=10V, ID=3A(Note4) 3
Continuous Source Current (Body Diode) IS 6 A TC=25 °C 4
Maximum Pulsed Current (Body Diode) ISM 24 A 4
Diode Forward Voltage VSD 1.2 V IS=6A, VGS=0V(Note4) 4
Drain-to-Source Voltage VDSS 1200 V 2
Continuous Drain Current ID 6 A 2
Continuous Drain Current ID 3.5 A TC = 100 °C 2
Pulsed Drain Current IDM 24 A 2
Gate-to-Source Voltage VGS -30 30 V 2
Single Pulse Avalanche Energy EAS 480 mJ Note2: L=20mH, VDs=50V, Start TJ=25℃ 2
Peak Diode Recovery dv/dt dv/dt 5 V/ns Note3: ISD =6A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 2
Power Dissipation (TO-220F, TO-3PF) PD 63 W TO-220F, TO-3PF 2
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 2
Maximum Temperature for Soldering TL 300 ℃ 2
Junction-to-Case (FullPAK) RθJC 2 ℃/W FullPAK TO-220F/TO-3PF 2
Junction-to-Ambient (FullPAK) RθJA 62.5 ℃/W FullPAK TO-220F/TO-3PF 2

CAD (KiCad official)

  • Symbol: BL6N120-A
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BL(Shanghai Belling) datasheet (16 pp, sha256 7258037bc4ad8b84, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF