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BL3400

Public Made by Adom

by adom

GME(银河微电) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BL3400

GME(银河微电) · MOSFETs · SOT-23

BL3400 from GME(银河微电), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) 0.7 to 1.4 V at ID=250μA and an absolute maximum VGSS of ±12 V.
2 S passive Source; the body-diode continuous current IS is rated 2.0 A.
3 D passive Drain; rated for VDSS of 30 V, continuous ID of 5.7 A at TA=25℃ and pulsed IDM of 25 A.

Key specifications

Parameter Value
Manufacturer GME(银河微电)
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30 VGS=0V 2
Gate-body Leakage IGSS 100 nA VDS=0V, VGS=±12V 2
Gate Threshold Voltage VGS(th) 0.7 1 1.4 V VDS=VGS, ID=250μA 2
On state drain current IDON) 25 A VDS=5V,VGS=4.5V 2
Static drain-Source on-resistance RDS(ON) 22 26.5 mΩ VGS=10V,ID=5.7A 2
Static drain-Source on-resistance RDS(ON) 25.4 32 mΩ VGS=4.5V,ID=5A 2
Static drain-Source on-resistance RDS(ON) 34 48 mΩ VGS=2.5V,ID=3A 2
Drain-Source diode forward voltage VSD 0.72 1 V VGS=0V,Is=1A 2
Maximum Body-Diode Continuous Current IS 2 A 2
Input capacitance CISS 900 1100 pF VDS=15V,VGS=0V,f=1.0MHz 2
Gate resistance Rg 0.95 1.5 Ω VDS=0V,VGS=0V,f=1.0MHz 2
Total Gate Charge Qg 10 13 nC VDS = 15V, ID= 5.7A, VGS= 4.5V 2
Body Diode Reverse Recovery Time trr 16.8 20 nS IF=5.7A, dI/dt=100A/μs 2
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -12 12 V 1
Continuous Drain Current ID 5.7 A TA = 25 ℃ 1
Continuous Drain Current ID 4.7 A TA = 70 ℃ 1
Pulsed Drain Current IDM 25 A 1
Power Dissipation PD 1.4 W 1
Thermal resistance, Junction-to-Ambient RθJA 70 ℃/W 1
Junction and Storage Temperature TJ, Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: BL3400
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bl3400-etched.step / bl3400-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bl3400.step / bl3400.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GME(银河微电) datasheet (5 pp, sha256 f9052488c8c4afb6, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF