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BFU530A
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NXP Semicon Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BFU530A
NXP Semicon · Bipolar (BJT) · SOT-23-3
BFU530A from NXP Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor (Table 2 lists it as 'base'); the datasheet gives no pin-specific electrical limit for this lead. |
| 2 | E | passive | Emitter terminal of the NPN transistor (Table 2 lists it as 'emitter'); the datasheet gives no pin-specific electrical limit for this lead. |
| 3 | C | passive | Collector terminal of the NPN transistor (Table 2 lists it as 'collector'); Tsp is defined at the solder point of this lead, and the datasheet gives no pin-specific electrical limit for it. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCB | 30 | V | open emitter | 3 | ||
| collector-emitter voltage | VCE | 16 | V | open base | 3 | ||
| collector-emitter voltage | VCE | 30 | V | shorted base | 3 | ||
| emitter-base voltage | VEB | 3 | V | open collector | 3 | ||
| collector current | IC | 65 | mA | 3 | |||
| storage temperature | Tstg | -65 | 150 | C | 3 | ||
| electrostatic discharge voltage, Human Body Model | VESD | 150 | V | HBM according to JEDEC standard 22-A114E | 3 | ||
| electrostatic discharge voltage, Charged Device Model | VESD | 2 | kV | CDM according to JEDEC standard 22-C101B | 3 | ||
| collector-base voltage | VCB | 24 | V | open emitter | 3 | ||
| collector-emitter voltage | VCE | 12 | V | open base | 3 | ||
| collector-emitter voltage | VCE | 24 | V | shorted base | 3 | ||
| emitter-base voltage | VEB | 2 | V | open collector | 3 | ||
| collector current | IC | 40 | mA | 3 | |||
| input power | Pi | 10 | dBm | ZS = 50 | 3 | ||
| junction temperature | Tj | -40 | 150 | C | 3 | ||
| total power dissipation | Ptot | 450 | mW | Tsp <= 87 C [1] | 3 | ||
| collector-base breakdown voltage | V(BR)CBO | 24 | V | IC = 100 nA; IE = 0 mA | 4 | ||
| collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 150 nA; IB = 0 mA | 4 | ||
| collector current | IC | 10 | 40 | mA | 4 | ||
| DC current gain | hFE | 60 | 95 | 200 | IC = 10 mA; VCE = 8 V | 4 | |
| thermal resistance from junction to solder point | Rth(j-sp) | 140 | K/W | 4 |
CAD (KiCad official)
- Symbol:
BFU530A - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
bfu530a-etched.step/bfu530a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfu530a.step/bfu530a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: NXP Semicon datasheet (22 pp, sha256
2063428cceb27358, retrieved 2026-10-17, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BFU530A
**NXP Semicon** · Bipolar (BJT) · SOT-23-3
BFU530A from NXP Semicon, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor (Table 2 lists it as 'base'); the datasheet gives no pin-specific electrical limit for this lead. |
| 2 | E | passive | Emitter terminal of the NPN transistor (Table 2 lists it as 'emitter'); the datasheet gives no pin-specific electrical limit for this lead. |
| 3 | C | passive | Collector terminal of the NPN transistor (Table 2 lists it as 'collector'); Tsp is defined at the solder point of this lead, and the datasheet gives no pin-specific electrical limit for it. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | NXP Semicon |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCB | | | 30 | V | open emitter | 3 |
| collector-emitter voltage | VCE | | | 16 | V | open base | 3 |
| collector-emitter voltage | VCE | | | 30 | V | shorted base | 3 |
| emitter-base voltage | VEB | | | 3 | V | open collector | 3 |
| collector current | IC | | | 65 | mA | | 3 |
| storage temperature | Tstg | -65 | | 150 | C | | 3 |
| electrostatic discharge voltage, Human Body Model | VESD | | | 150 | V | HBM according to JEDEC standard 22-A114E | 3 |
| electrostatic discharge voltage, Charged Device Model | VESD | | | 2 | kV | CDM according to JEDEC standard 22-C101B | 3 |
| collector-base voltage | VCB | | | 24 | V | open emitter | 3 |
| collector-emitter voltage | VCE | | | 12 | V | open base | 3 |
| collector-emitter voltage | VCE | | | 24 | V | shorted base | 3 |
| emitter-base voltage | VEB | | | 2 | V | open collector | 3 |
| collector current | IC | | | 40 | mA | | 3 |
| input power | Pi | | | 10 | dBm | ZS = 50 | 3 |
| junction temperature | Tj | -40 | | 150 | C | | 3 |
| total power dissipation | Ptot | | | 450 | mW | Tsp <= 87 C [1] | 3 |
| collector-base breakdown voltage | V(BR)CBO | 24 | | | V | IC = 100 nA; IE = 0 mA | 4 |
| collector-emitter breakdown voltage | V(BR)CEO | 12 | | | V | IC = 150 nA; IB = 0 mA | 4 |
| collector current | IC | | 10 | 40 | mA | | 4 |
| DC current gain | hFE | 60 | 95 | 200 | | IC = 10 mA; VCE = 8 V | 4 |
| thermal resistance from junction to solder point | Rth(j-sp) | | 140 | | K/W | | 4 |
## CAD (KiCad official)
- Symbol: `BFU530A`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `bfu530a-etched.step` / `bfu530a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bfu530a.step` / `bfu530a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [NXP Semicon datasheet](https://www.nxp.com/docs/en/data-sheet/BFU530A.pdf) (22 pp, sha256 `2063428cceb27358`, retrieved 2026-10-17, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bfu530a-datasheet.pdf)