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BFS17NTA-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

BFS17NTA-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; the package drawing labels this lead B, and the Emitter-Base voltage rating is VEBO = 3 V.
2 E passive Emitter; the package drawing labels this lead E, and the Collector current is rated IC = 100 mA.
3 C passive Collector, the single lead on one side of the package; rated VCBO = 20 V, VCEO = 12 V and IC = 100 mA.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 20 V 1
Collector-Emitter Voltage VCEO 12 V 1
Emitter-Base Voltage VEBO 3 V 1
Collector Current IC 100 mA 1
Collector Power Dissipation PC 200 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Thermal Resistance From Junction To Ambient RθJA 625 °C/W 1
Collector-base breakdown voltage V(BR)CBO 20 V IC=100µA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 12 V IC=1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 3 V IE=100µA, IC=0 2
Collector cut-off current ICBO 1 uA VCB=10V, IE=0 2
Emitter cut-off current IEBO 1 uA VEB=1V, IC=0 2
DC current gain hFE(1) 125 250 VCE=10V, IC=20mA 2
Collector-emitter saturation voltage VCE(sat) 0.3 V IC=50mA, IB=5mA 2
Base-emitter saturation voltage VBE(sat) 1.15 V IC=50mA, IB=5mA 2
Collector output capacitance Cob 1 pF VCB=10V, IE=0, f=1MHz 2
Noise Figure NF 2 dB VCB=10V, IC=7mA, f=1GHz 2
Transition frequency fT 7 GHz VCE=10V,IC=20mA 2

CAD (KiCad official)

  • Symbol: BFS17NTA-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bfs17nta-hxy-etched.step / bfs17nta-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfs17nta-hxy.step / bfs17nta-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 d2cbe53bed3d438f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF