component
BFR93AWH6327
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BFR93AWH6327
Infineon Technologies · Bipolar (BJT) · SOT-323
BFR93AWH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the BFR93AW low-noise NPN RF transistor, with a base current rating IB listed as 9 in the absolute maximum table (unit not printed in the extracted text). |
| 2 | E | passive | Emitter terminal of the BFR93AW, with an emitter-base voltage rating VEBO listed as 2 in the absolute maximum table (unit not printed in the extracted text). |
| 3 | C | passive | Collector terminal of the BFR93AW, rated for a collector current IC of 90 mA with VCEO 12 V, VCES 20, and VCBO 20 in the absolute maximum table. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 12 | V | 1 | |||
| Collector-emitter voltage | VCES | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 2 | V | 1 | |||
| Collector current | IC | 90 | mA | 1 | |||
| Base current | IB | 9 | 1 | ||||
| Total power dissipation | Ptot | 300 | mW | TS ≤ 108 °C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Ambient temperature | TA | -65 | 150 | °C | 1 | ||
| Storage temperature | TStg | -65 | 150 | °C | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 100 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 10 | µA | VEB = 2 V, IC = 0 | 2 | ||
| DC current gain | hFE | 70 | 100 | 140 | - | IC = 30 mA, VCE = 8 V, pulse measured | 2 |
| Transition frequency | fT | 4.5 | 6 | GHz | IC = 30 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 0.58 | 0.8 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 | |
| Junction - soldering point thermal resistance | RthJS | 140 | K/W | 1 |
CAD (KiCad official)
- Symbol:
BFR93AWH6327 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bfr93awh6327-etched.step/bfr93awh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfr93awh6327.step/bfr93awh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (6 pp, sha256
03d3f240b5332280, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).