component
BFR193WH6327
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| bfr193wh6327-etched.glb | 23d ago |
| bfr193wh6327-etched.step | 23d ago |
| bfr193wh6327-hero.glb | 23d ago |
| bfr193wh6327-hero.overlay.json | 23d ago |
| bfr193wh6327.glb | 23d ago |
| bfr193wh6327.kicad_mod | 23d ago |
| bfr193wh6327.kicad_sym | 23d ago |
| bfr193wh6327.lbr | 23d ago |
| bfr193wh6327.step | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BFR193WH6327
Infineon Technologies · Bipolar (BJT) · SOT-323
BFR193WH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the datasheet gives an absolute maximum base current IB of 10 mA and an emitter-base voltage VEBO of 2 V. |
| 2 | E | passive | Emitter terminal of the NPN transistor; the emitter-base voltage is limited to VEBO = 2 V and the emitter-base capacitance is specified with the collector grounded. |
| 3 | C | passive | Collector terminal of the NPN transistor; the datasheet limits collector current IC to 80 mA, collector-emitter voltage VCEO to 12 V, and total power dissipation Ptot to 580 mW at TS ≤ 63 °C, measured on the collector lead. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 12 | V | 1 | |||
| Collector-emitter voltage | VCES | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 2 | V | 1 | |||
| Collector current | IC | 80 | mA | 1 | |||
| Base current | IB | 10 | 1 | ||||
| Total power dissipation | Ptot | 580 | mW | TS ≤ 63°C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature | TStg | -55 | 150 | °C | 1 | ||
| Junction - soldering point | RthJS | 150 | K/W | 1 | |||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 100 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 1 | µA | VEB = 1 V, IC = 0 | 2 | ||
| DC current gain | hFE | 70 | 100 | 140 | - | IC = 30 mA, VCE = 8 V, pulse measured | 2 |
| Transition frequency | fT | 6 | 8 | GHz | IC = 50 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 0.74 | 1 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 |
CAD (KiCad official)
- Symbol:
BFR193WH6327 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bfr193wh6327-etched.step/bfr193wh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfr193wh6327.step/bfr193wh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (6 pp, sha256
e59b407d6f7ed54f, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).