component
BFR193WH6327
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bfr193wh6327: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -21,6 +21,30 @@ BFR193WH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-emitter voltage | VCEO | | | 12 | V | | 1 |+| Collector-emitter voltage | VCES | | | 20 | V | | 1 |+| Collector-base voltage | VCBO | | | 20 | V | | 1 |+| Emitter-base voltage | VEBO | | | 2 | V | | 1 |+| Collector current | IC | | | 80 | mA | | 1 |+| Base current | IB | | | 10 | | | 1 |+| Total power dissipation | Ptot | | | 580 | mW | TS ≤ 63°C | 1 |+| Junction temperature | TJ | | | 150 | °C | | 1 |+| Storage temperature | TStg | -55 | | 150 | °C | | 1 |+| Junction - soldering point | RthJS | | 150 | | K/W | | 1 |+| Collector-emitter breakdown voltage | V(BR)CEO | 12 | | | V | IC = 1 mA, IB = 0 | 2 |+| Collector-emitter cutoff current | ICES | | | 100 | µA | VCE = 20 V, VBE = 0 | 2 |+| Collector-base cutoff current | ICBO | | | 100 | nA | VCB = 10 V, IE = 0 | 2 |+| Emitter-base cutoff current | IEBO | | | 1 | µA | VEB = 1 V, IC = 0 | 2 |+| DC current gain | hFE | 70 | 100 | 140 | - | IC = 30 mA, VCE = 8 V, pulse measured | 2 |+| Transition frequency | fT | 6 | 8 | | GHz | IC = 50 mA, VCE = 8 V, f = 500 MHz | 3 |+| Collector-base capacitance | Ccb | | 0.74 | 1 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 |+ ## CAD (KiCad official) - Symbol: `BFR193WH6327`
page.json+212−1@@ -149,6 +149,217 @@ "Package": "SOT-323", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e59b407d6f7ed54f",+ "rows": [+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCES",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Base current",+ "symbol": "IB",+ "kind": "absolute_maximum",+ "unit": "",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 580,+ "conditions": "TS ≤ 63°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "TStg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction - soldering point",+ "symbol": "RthJS",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": 150,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 12,+ "typ": null,+ "max": null,+ "conditions": "IC = 1 mA, IB = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter cutoff current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCE = 20 V, VBE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-base cutoff current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCB = 10 V, IE = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base cutoff current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VEB = 1 V, IC = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "-",+ "min": 70,+ "typ": 100,+ "max": 140,+ "conditions": "IC = 30 mA, VCE = 8 V, pulse measured",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "GHz",+ "min": 6,+ "typ": 8,+ "max": null,+ "conditions": "IC = 50 mA, VCE = 8 V, f = 500 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-base capacitance",+ "symbol": "Ccb",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 0.74,+ "max": 1,+ "conditions": "VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +401,4 @@ "visibility": { "public": true }-}+}