component
BFR183E6327HTSA1
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
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| viewers | 17d ago |
| bfr183e6327htsa1-etched.glb | 17d ago |
| bfr183e6327htsa1-etched.step | 17d ago |
| bfr183e6327htsa1-hero.glb | 17d ago |
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| bfr183e6327htsa1.glb | 17d ago |
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| bfr183e6327htsa1.lbr | 17d ago |
| bfr183e6327htsa1.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BFR183E6327HTSA1
Infineon Technologies · Bipolar (BJT) · SOT-23-3
BFR183E6327HTSA1 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base lead of the NPN transistor; the datasheet gives a maximum base current IB of 5 mA. |
| 2 | E | passive | Emitter lead of the NPN transistor; the datasheet gives a maximum emitter-base voltage VEBO of 2 V. |
| 3 | C | passive | Collector lead of the NPN transistor; the datasheet gives a maximum collector-emitter voltage VCEO of 12 V and a maximum collector current IC of 65 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 100 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 1 | µA | VEB = 1 V, IC = 0 | 2 | ||
| DC current gain | hFE | 70 | 100 | 140 | IC = 15 mA, VCE = 8 V, pulse measured | 2 | |
| Transition frequency | fT | 6 | 8 | GHz | IC = 25 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 0.37 | 0.57 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 | |
| Collector-emitter voltage | VCEO | 12 | V | 1 | |||
| Collector-emitter voltage | VCES | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 2 | V | 1 | |||
| Collector current | IC | 65 | mA | 1 | |||
| Base current | IB | 5 | mA | 1 | |||
| Total power dissipation | Ptot | 450 | mW | TS ≤ 60 °C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature | TStg | -55 | 150 | °C | 1 | ||
| Junction - soldering point thermal resistance | RthJS | 200 | K/W | 1 |
CAD (KiCad official)
- Symbol:
BFR183E6327HTSA1 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
bfr183e6327htsa1-etched.step/bfr183e6327htsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfr183e6327htsa1.step/bfr183e6327htsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (6 pp, sha256
09829a29e4d76d5a, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).