component
BFR106E6327
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| bfr106e6327-etched.glb | 17d ago |
| bfr106e6327-etched.step | 17d ago |
| bfr106e6327-hero.glb | 17d ago |
| bfr106e6327-hero.overlay.json | 17d ago |
| bfr106e6327.glb | 17d ago |
| bfr106e6327.kicad_mod | 17d ago |
| bfr106e6327.kicad_sym | 17d ago |
| bfr106e6327.lbr | 17d ago |
| bfr106e6327.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BFR106E6327
Infineon Technologies · Bipolar (BJT) · SOT-23
BFR106E6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal; the datasheet limits the base current to IB = 21 mA. |
| 2 | E | passive | Emitter terminal; the emitter-base voltage is limited to VEBO = 3 V. |
| 3 | C | passive | Collector terminal; the datasheet limits the collector current to IC = 210 mA and the collector-emitter voltage to VCEO = 16 V (VCES = 20 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage, TA = 25°C | VCEO | 16 | V | TA = 25°C | 1 | ||
| Collector-emitter voltage, TA = -55°C | VCEO | 15 | V | TA = -55°C | 1 | ||
| Collector-emitter voltage | VCES | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 3 | V | 1 | |||
| Collector current | IC | 210 | mA | 1 | |||
| Base current | IB | 21 | mA | 1 | |||
| Total power dissipation | Ptot | 700 | mW | TS ≤ 76 °C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature | TStg | -55 | 150 | °C | 1 | ||
| Junction - soldering point thermal resistance | RthJS | 105 | K/W | Junction - soldering point | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 1 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 0.001 | 0.03 | µA | VCE = 10 V, VBE = 0 | 2 | |
| Collector-base cutoff current | ICBO | 1 | 30 | nA | VCB = 10 V, IE = 0 | 2 | |
| Emitter-base cutoff current | IEBO | 1 | 30 | nA | VEB = 2 V, IC = 0 | 2 | |
| DC current gain | hFE | 70 | 100 | 140 | - | IC = 70 mA, VCE = 8 V, pulse measured | 2 |
| Transition frequency | fT | 3.5 | 5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 0.85 | 1.2 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 |
CAD (KiCad official)
- Symbol:
BFR106E6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bfr106e6327-etched.step/bfr106e6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfr106e6327.step/bfr106e6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
8e92a2441065d80d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).