component
BFQ19SH6327
Public Made by Adomby adom
Infineon Technologies Bipolar (BJT), SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| bfq19sh6327-etched.glb | 7d ago |
| bfq19sh6327-etched.step | 7d ago |
| bfq19sh6327-hero.glb | 7d ago |
| bfq19sh6327-hero.overlay.json | 7d ago |
| bfq19sh6327.glb | 7d ago |
| bfq19sh6327.kicad_mod | 7d ago |
| bfq19sh6327.kicad_sym | 7d ago |
| bfq19sh6327.lbr | 7d ago |
| bfq19sh6327.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
BFQ19SH6327
Infineon Technologies · Bipolar (BJT) · SOT-89-3
BFQ19SH6327 from Infineon Technologies, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base lead; the datasheet gives a base current limit of IB 12 mA (maximum ratings at TA = 25 °C). |
| 2 | C | passive | Collector lead; the datasheet gives a collector current limit of IC 120 mA and a collector-emitter voltage limit of VCEO 15 V, and TS (for Ptot 1 W at TS ≤ 85 °C) is measured on this lead at the PCB soldering point. |
| 3 | E | passive | Emitter lead; the datasheet gives an emitter-base voltage limit of VEBO 3 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-89-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain | hFE | 70 | 100 | 140 | - | IC = 70 mA, VCE = 8 V, pulse measured | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 15 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 10 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 100 | µA | VEB = 2 V, IC = 0 | 2 | ||
| Transition frequency | fT | 4 | 5.5 | GHz | IC = 70 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 1.05 | 1.35 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 | |
| Collector-emitter voltage | VCEO | 15 | V | 1 | |||
| Collector-emitter voltage | VCES | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 20 | V | 1 | |||
| Emitter-base voltage | VEBO | 3 | V | 1 | |||
| Collector current | IC | 120 | mA | 1 | |||
| Base current | IB | 12 | mA | 1 | |||
| Total power dissipation | Ptot | 1 | W | TS ≤ 85 °C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Ambient temperature | TA | -65 | 150 | °C | 1 | ||
| Storage temperature | TStg | -65 | 150 | °C | 1 | ||
| Junction - soldering point thermal resistance | RthJS | 65 | K/W | TS measured on collector lead at soldering point to PCB | 1 |
CAD (KiCad official)
- Symbol:
BFQ19SH6327 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files:
bfq19sh6327-etched.step/bfq19sh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfq19sh6327.step/bfq19sh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (7 pp, sha256
b1489e0c19917741, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).