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Ray Publish 0.1.0 5bc0d7b 13d ago

BFP 181 E7764

Infineon Technologies · Bipolar (BJT) · SOT-143

BFP 181 E7764 from Infineon Technologies, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector of the NPN RF transistor; the datasheet gives maximum collector-emitter voltage VCEO 12 V and collector current IC 20 mA, and Ts is measured on this lead at the solder point.
2 E passive Emitter of the transistor, connected to the package emitter terminal; the datasheet specifies no separate pin-level limit for this lead.
3 B input Base of the transistor; the datasheet gives maximum base current IB 2 mA and emitter-base voltage VEBO 2 V.
4 E passive Second emitter terminal, internally common with pin 2; the datasheet specifies no separate pin-level limit for this lead.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-143
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCEO 12 V 1
Collector-emitter voltage VCES 20 1
Collector-base voltage VCBO 20 1
Emitter-base voltage VEBO 2 1
Collector current IC 20 mA 1
Base current IB 2 1
Total power dissipation Ptot 175 mW TS ≤ 75 °C 1
Junction temperature TJ 150 °C 1
Storage temperature TStg -55 150 1
Junction - soldering point thermal resistance RthJS 430 K/W Junction to soldering point; TS measured on collector lead 1
Collector-emitter breakdown voltage V(BR)CEO 12 V IC = 1 mA, IB = 0 2
Collector-emitter cutoff current ICES 100 µA VCE = 20 V, VBE = 0 2
Collector-base cutoff current ICBO 100 nA VCB = 10 V, IE = 0 2
Emitter-base cutoff current IEBO 1 µA VEB = 1 V, IC = 0 2
DC current gain hFE 70 100 140 IC = 5 mA, VCE = 8 V, pulse measured 2
Transition frequency fT 6 8 GHz IC = 10 mA, VCE = 8 V, f = 500 MHz 3
Collector-base capacitance Ccb 0.19 0.4 pF VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded 3

CAD (KiCad official)

  • Symbol: BFP 181 E7764
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: bfp-181-e7764-etched.step / bfp-181-e7764-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfp-181-e7764.step / bfp-181-e7764.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (6 pp, sha256 d182b32a72d77154, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF