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BFP 181 E7764
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Infineon Technologies Bipolar (BJT), SOT-143. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BFP 181 E7764
Infineon Technologies · Bipolar (BJT) · SOT-143
BFP 181 E7764 from Infineon Technologies, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the NPN RF transistor; the datasheet gives maximum collector-emitter voltage VCEO 12 V and collector current IC 20 mA, and Ts is measured on this lead at the solder point. |
| 2 | E | passive | Emitter of the transistor, connected to the package emitter terminal; the datasheet specifies no separate pin-level limit for this lead. |
| 3 | B | input | Base of the transistor; the datasheet gives maximum base current IB 2 mA and emitter-base voltage VEBO 2 V. |
| 4 | E | passive | Second emitter terminal, internally common with pin 2; the datasheet specifies no separate pin-level limit for this lead. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-143 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 12 | V | 1 | |||
| Collector-emitter voltage | VCES | 20 | 1 | ||||
| Collector-base voltage | VCBO | 20 | 1 | ||||
| Emitter-base voltage | VEBO | 2 | 1 | ||||
| Collector current | IC | 20 | mA | 1 | |||
| Base current | IB | 2 | 1 | ||||
| Total power dissipation | Ptot | 175 | mW | TS ≤ 75 °C | 1 | ||
| Junction temperature | TJ | 150 | °C | 1 | |||
| Storage temperature | TStg | -55 | 150 | 1 | |||
| Junction - soldering point thermal resistance | RthJS | 430 | K/W | Junction to soldering point; TS measured on collector lead | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC = 1 mA, IB = 0 | 2 | ||
| Collector-emitter cutoff current | ICES | 100 | µA | VCE = 20 V, VBE = 0 | 2 | ||
| Collector-base cutoff current | ICBO | 100 | nA | VCB = 10 V, IE = 0 | 2 | ||
| Emitter-base cutoff current | IEBO | 1 | µA | VEB = 1 V, IC = 0 | 2 | ||
| DC current gain | hFE | 70 | 100 | 140 | IC = 5 mA, VCE = 8 V, pulse measured | 2 | |
| Transition frequency | fT | 6 | 8 | GHz | IC = 10 mA, VCE = 8 V, f = 500 MHz | 3 | |
| Collector-base capacitance | Ccb | 0.19 | 0.4 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 |
CAD (KiCad official)
- Symbol:
BFP 181 E7764 - Footprint:
Package_TO_SOT_SMD:SOT-143 - 3D model: SOT-143 (KiCad packages3D, STEP)
- 3D model files:
bfp-181-e7764-etched.step/bfp-181-e7764-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bfp-181-e7764.step/bfp-181-e7764.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (6 pp, sha256
d182b32a72d77154, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BFP 181 E7764
**Infineon Technologies** · Bipolar (BJT) · SOT-143
BFP 181 E7764 from Infineon Technologies, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector of the NPN RF transistor; the datasheet gives maximum collector-emitter voltage VCEO 12 V and collector current IC 20 mA, and Ts is measured on this lead at the solder point. |
| 2 | E | passive | Emitter of the transistor, connected to the package emitter terminal; the datasheet specifies no separate pin-level limit for this lead. |
| 3 | B | input | Base of the transistor; the datasheet gives maximum base current IB 2 mA and emitter-base voltage VEBO 2 V. |
| 4 | E | passive | Second emitter terminal, internally common with pin 2; the datasheet specifies no separate pin-level limit for this lead. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-143 |
| Category | Transistors/Thyristors |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | | | 12 | V | | 1 |
| Collector-emitter voltage | VCES | | | 20 | | | 1 |
| Collector-base voltage | VCBO | | | 20 | | | 1 |
| Emitter-base voltage | VEBO | | | 2 | | | 1 |
| Collector current | IC | | | 20 | mA | | 1 |
| Base current | IB | | | 2 | | | 1 |
| Total power dissipation | Ptot | | | 175 | mW | TS ≤ 75 °C | 1 |
| Junction temperature | TJ | | | 150 | °C | | 1 |
| Storage temperature | TStg | -55 | | 150 | | | 1 |
| Junction - soldering point thermal resistance | RthJS | | | 430 | K/W | Junction to soldering point; TS measured on collector lead | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | | | V | IC = 1 mA, IB = 0 | 2 |
| Collector-emitter cutoff current | ICES | | | 100 | µA | VCE = 20 V, VBE = 0 | 2 |
| Collector-base cutoff current | ICBO | | | 100 | nA | VCB = 10 V, IE = 0 | 2 |
| Emitter-base cutoff current | IEBO | | | 1 | µA | VEB = 1 V, IC = 0 | 2 |
| DC current gain | hFE | 70 | 100 | 140 | | IC = 5 mA, VCE = 8 V, pulse measured | 2 |
| Transition frequency | fT | 6 | 8 | | GHz | IC = 10 mA, VCE = 8 V, f = 500 MHz | 3 |
| Collector-base capacitance | Ccb | | 0.19 | 0.4 | pF | VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded | 3 |
## CAD (KiCad official)
- Symbol: `BFP 181 E7764`
- Footprint: `Package_TO_SOT_SMD:SOT-143`
- 3D model: SOT-143 (KiCad packages3D, STEP)
- 3D model files: `bfp-181-e7764-etched.step` / `bfp-181-e7764-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bfp-181-e7764.step` / `bfp-181-e7764.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912285842878464) (6 pp, sha256 `d182b32a72d77154`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bfp-181-e7764-datasheet.pdf)