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BFN27E6327HTSA1

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Infineon Technologies Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BFN27E6327HTSA1

Infineon Technologies · Bipolar Transistors - BJT · SOT-23

BFN27E6327HTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; base current IB max 100 mA, peak 200 mA, emitter-base voltage VEBO max 5 V.
2 E passive Emitter of the PNP transistor; emitter-base voltage VEBO max 5 V.
3 C passive Collector of the PNP transistor; VCEO 300 V, VCBO 300 V, collector current IC 200 mA (peak 500 mA).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CEO 300 V IC = 1 mA, IB = 0 2
Collector-base breakdown voltage V(BR)CBO 300 V IC = 100 µA, IE = 0 2
Emitter-base breakdown voltage V(BR)EBO 5 V IE = 100 µA, IC = 0 2
Collector-base cutoff current ICBO 0.1 µA VCB = 250 V, IE = 0 2
Collector-base cutoff current (150 °C) ICBO 20 µA VCB = 250 V, IE = 0, TA = 150 °C 2
Emitter-base cutoff current IEBO 100 nA VEB = 5 V, IC = 0 2
DC current gain hFE 25 IC = 1 mA, VCE = 10 V 2
DC current gain hFE 40 IC = 10 mA, VCE = 10 V 2
DC current gain hFE 30 IC = 30 mA, VCE = 10 V 2
Collector-emitter saturation voltage VCEsat 0.5 V IC = 20 mA, IB = 2 mA 2
Base emitter saturation voltage VBEsat 0.9 V IC = 20 mA, IB = 2 mA 2
Transition frequency fT 100 MHz IC = 20 MHz, VCE = 10 V, f = 100 MHz 2
Collector-base capacitance Ccb 2.5 pF VCB = 30 V, f = 1 MHz 2
Collector-emitter voltage VCEO 300 V 1
Collector-base voltage VCBO 300 V 1
Emitter-base voltage VEBO 5 V 1
Collector current IC 200 mA 1
Peak collector current ICM 500 mA tp ≤ 10 ms 1
Base current IB 100 mA 1
Peak base current IBM 200 mA 1
Total power dissipation Ptot 360 mW TS ≤ 74 °C 1
Junction temperature Tj 150 °C 1
Storage temperature Tstg -65 150 °C 1
Thermal resistance junction - soldering point RthJS 210 K/W 1

CAD (KiCad official)

  • Symbol: BFN27E6327HTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bfn27e6327htsa1-etched.step / bfn27e6327htsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bfn27e6327htsa1.step / bfn27e6327htsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (7 pp, sha256 ae48215f03e3f10e, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF