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BF823

Nexperia · Bipolar (BJT) · SOT-23

BF823 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; the limiting values include a peak base current IBM of -50 mA and an emitter-base voltage VEBO of -5 V (open collector).
2 E passive Emitter terminal of the PNP transistor; the emitter-base voltage is limited to VEBO = -5 V with the collector open.
3 C passive Collector terminal of the PNP transistor; the limits are VCEO = -250 V (open base), collector current IC = -50 mA and peak collector current ICM = -100 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -250 V open emitter 2
Collector-emitter voltage VCEO -250 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Collector current IC -50 mA 2
Peak collector current ICM -100 mA 2
Peak base current IBM -50 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C; device mounted on PCB, collector mounting pad 1 cm2 [1] 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W device mounted on PCB, collector mounting pad 1 cm2 [1] 2
Collector-base cut-off current ICBO -10 nA VCB = -200 V; IE = 0 A; Tamb = 25 °C 3
Collector-base cut-off current ICBO -10 µA VCB = -200 V; IE = 0 A; Tj = 150 °C 3
Emitter-base cut-off current IEBO -50 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 50 VCE = -20 V; IC = -25 mA; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat -800 mV IC = -30 mA; IB = -5 mA; Tamb = 25 °C 3
Feedback capacitance Cre 1.6 pF VCB = -30 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C 3
Transition frequency fT 60 MHz VCE = -10 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BF823
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bf823-etched.step / bf823-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bf823.step / bf823.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 10969f9723a8eac5, retrieved 2026-10-18, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF