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BF820W

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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BF820W

Nexperia · Bipolar (BJT) · SOT-323-3

BF820W from Nexperia, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor; the datasheet limits the peak base current IBM to 50 mA.
2 E passive Emitter terminal of the NPN transistor; the datasheet limits the emitter-base voltage VEBO to 5 V.
3 C passive Collector terminal of the NPN transistor; the datasheet limits VCBO and VCEO to 300 V and IC to 50 mA.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 300 V open emitter 2
Collector-emitter voltage VCEO 300 V open base 2
Emitter-base voltage VEBO 5 V open collector 2
Collector current IC 50 mA 2
Peak collector current ICM 100 mA 2
Peak base current IBM 50 mA 2
Total power dissipation Ptot 200 mW Tamb ≤ 25 °C 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 625 K/W Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2 2
Collector-base cut-off current ICBO 10 nA VCB = 200 V; IE = 0 A; Tamb = 25 °C 3
Collector-base cut-off current ICBO 10 µA VCB = 200 V; IE = 0 A; Tj = 150 °C 3
Emitter-base cut-off current IEBO 50 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 50 VCE = 20 V; IC = 25 mA; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat 600 mV IC = 30 mA; IB = 5 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 3
Feedback capacitance Cre 1.6 pF VCB = 30 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C 3
Transition frequency fT 60 MHz VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BF820W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bf820w-etched.step / bf820w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bf820w.step / bf820w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 64a1e9589802cc5e, retrieved 2026-10-15, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF