component
BF820
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| bf820-etched.glb | 17d ago |
| bf820-etched.step | 17d ago |
| bf820-hero.glb | 17d ago |
| bf820-hero.overlay.json | 17d ago |
| bf820.glb | 17d ago |
| bf820.kicad_mod | 17d ago |
| bf820.kicad_sym | 17d ago |
| bf820.lbr | 17d ago |
| bf820.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
BF820
Nexperia · Bipolar Transistors - BJT · SOT-23
BF820 from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5 V and peak base current IBM max 50 mA (single pulse, tp ≤ 1 ms). |
| 2 | E | passive | Emitter of the NPN transistor; VEBO (emitter-base, open collector) max 5 V. |
| 3 | C | passive | Collector of the NPN transistor; VCEO max 300 V, VCBO max 300 V, IC max 50 mA (ICM 100 mA peak). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base cut-off current | ICBO | 10 | nA | VCB = 200 V; IE = 0 A; Tamb = 25 °C | 3 | ||
| collector-base cut-off current | ICBO | 10 | µA | VCB = 200 V; IE = 0 A; Tj = 150 °C | 3 | ||
| emitter-base cut-off current | IEBO | 50 | nA | VEB = 5 V; IC = 0 A; Tamb = 25 °C | 3 | ||
| DC current gain | hFE | 50 | VCE = 20 V; IC = 25 mA; Tamb = 25 °C | 3 | |||
| collector-emitter saturation voltage | VCEsat | 600 | mV | IC = 30 mA; IB = 5 mA; Tamb = 25 °C | 3 | ||
| transition frequency | fT | 60 | MHz | VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C | 3 | ||
| feedback capacitance | Cre | 1.6 | pF | ic = 0 A; VCB = 30 V; f = 1 MHz; IC = 0 A; Tamb = 25 °C | 3 | ||
| collector-base voltage | VCBO | 300 | V | open emitter | 2 | ||
| collector-emitter voltage | VCEO | 300 | V | open base | 2 | ||
| emitter-base voltage | VEBO | 5 | V | open collector | 2 | ||
| collector current | IC | 50 | mA | 2 | |||
| peak collector current | ICM | 100 | mA | 2 | |||
| peak base current | IBM | 50 | mA | single pulse; tp ≤ 1 ms | 2 | ||
| total power dissipation | Ptot | 250 | mW | Tamb ≤ 25 °C; transistor mounted on an FR4 printed-circuit board | 2 | ||
| junction temperature | Tj | 150 | °C | 2 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 2 | ||
| storage temperature | Tstg | -65 | 150 | °C | 2 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 500 | K/W | transistor mounted on an FR4 printed-circuit board | 2 |
CAD (KiCad official)
- Symbol:
BF820 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bf820-etched.step/bf820-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bf820.step/bf820.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (7 pp, sha256
0193d8a81b64201f, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).