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Contents

README

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BF 2040 E6814

Infineon Technologies · MOSFETs · SOT-143

BF 2040 E6814 from Infineon Technologies, in a SOT-143. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the MOSFET tetrode; total power dissipation is limited to 200 mW at TS ≤ 76 °C for the SOT143 package.
2 D passive Drain terminal; drain-source voltage is limited to 8 V maximum and continuous drain current to 40 mA.
3 G2 input Gate 2 control input used for gain control; gate 1/gate 2-source current is limited to ±10 mA and gate 2-source breakdown voltage is 6 V min to 15 V max.
4 G1 input Gate 1 signal input; external biasing voltage is limited to +7 V maximum and gate 1/gate 2-source current to ±10 mA.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-143
Category Transistors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DS 10 V ID = 20 µA, VG1S = 0, VG2S = 0 2
Gate1-source breakdown voltage +V(BR)G1SS 6 15 V +IG1S = 10 mA, VG2S = 0, VDS = 0 2
Gate2-source breakdown voltage +V(BR)G2SS 6 15 V +IG2S = 10 mA, VG1S = 0, VDS = 0 2
Gate1-source leakage current +IG1SS 50 nA VG1S = 5 V, VG2S = 0, VDS = 0 2
Gate2-source leakage current +IG2SS 50 nA VG2S = 5 V, VG1S = 0, VDS = 0 2
Drain current IDSS 50 µA VDS = 5 V, VG1S = 0, VG2S = 4 V 2
Gate1-source pinch-off voltage VG1S(p) 0.3 0.6 V VDS = 5 V, VG2S = 4 V, ID = 20 µA 2
Gate2-source pinch-off voltage VG2S(p) 0.3 0.7 V VDS = 5 V, ID = 20 µA 2
Forward transconductance gfs 37 42 mS VDS = 5 V, ID = 15 mA, VG2S = 4 V 3
Gate1 input capacitance Cg1ss 2.9 3.4 pF VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 10 MHz 3
Power gain Gp 20 23 dB VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz 3
Noise figure F 1.6 2.2 dB VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz 3
Gain control range ∆Gp 45 50 dB VDS = 5 V, VG2S = 4 ...0 V, f = 800 GHz 3
Drain-source voltage VDS 8 V 1
Continuous drain current ID 40 mA 1
Gate 1/gate 2-source current ±IG1/2SM 10 1
Gate 1 (external biasing) +VG1SE 7 V 1
Total power dissipation Ptot 200 mW TS ≤ 76 °C, BF2040 1
Storage temperature Tstg -55 150 °C 1
Channel temperature Tch 150 °C 1
Channel - soldering point thermal resistance Rthchs 370 K/W BF2040 1
Drain-source current IDSX 15 mA VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ 2
Output capacitance Cdss 1.6 pF VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 10 MHz 3

CAD (KiCad official)

  • Symbol: BF 2040 E6814
  • Footprint: Package_TO_SOT_SMD:SOT-143
  • 3D model: SOT-143 (KiCad packages3D, STEP)
  • 3D model files: bf-2040-e6814-etched.step / bf-2040-e6814-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bf-2040-e6814.step / bf-2040-e6814.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 30fffdcd0ca2ce31, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF