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BESD3V3B15G
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BORN ESD Protection Devices, DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BESD3V3B15G
BORN · ESD Protection Devices · DFN1006-2
BESD3V3B15G from BORN, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin 1 | passive | One of two terminals of the bidirectional ESD protection diode, rated for a 3.3 V reverse stand-off voltage (VRWM) and 10 A peak pulse current (tp = 8/20 µs). |
| 2 | Pin 2 | passive | The other terminal of the bidirectional ESD protection diode, rated for a 3.3 V reverse stand-off voltage (VRWM) and 10 A peak pulse current (tp = 8/20 µs). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | DFN1006-2 |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 80 | W | tp=8/20μs | 2 | ||
| Peak Pulse Current | Ipp | 10 | A | tp=8/20μs (note 1) | 2 | ||
| ESD per IEC 61000-4-2 (Air) | VESD | 25 | kV | IEC 61000-4-2 air | 2 | ||
| ESD per IEC 61000-4-2 (Contact) | VESD | 15 | kV | IEC 61000-4-2 contact | 2 | ||
| Lead Soldering Temperature | TL | 260 | ℃ | 10 seconds | 2 | ||
| Junction Temperature | TJ | -55 | 125 | ℃ | 2 | ||
| Storage Temperature | Tstg | -55 | 125 | ℃ | 2 | ||
| Reverse Stand-Off Voltage | VRWM | 3.3 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 3.8 | V | IT=1mA | 2 | ||
| Reverse Leakage Current | IR | 0.1 | 0.2 | μA | VRWM=3.3V, T=25℃ | 2 | |
| Peak Pulse Current | IPP | 10 | A | tp=8/20μs | 2 | ||
| Clamping Voltage | VCL | 8 | V | IPP=16A, tp=100ns | 2 | ||
| Clamping Voltage | VC | 6 | V | IPP=5A, tp=8/20μs | 2 | ||
| Dynamic resistance | RDYN | 0.2 | Ω | 2 | |||
| Junction Capacitance | Cj | 12 | 18 | pF | VR=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
BESD3V3B15G - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files:
besd3v3b15g-etched.step/besd3v3b15g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);besd3v3b15g.step/besd3v3b15g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: BORN datasheet (4 pp, sha256
8030efc48fc63ca9, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BESD3V3B15G
**BORN** · ESD Protection Devices · DFN1006-2
BESD3V3B15G from BORN, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin 1 | passive | One of two terminals of the bidirectional ESD protection diode, rated for a 3.3 V reverse stand-off voltage (VRWM) and 10 A peak pulse current (tp = 8/20 µs). |
| 2 | Pin 2 | passive | The other terminal of the bidirectional ESD protection diode, rated for a 3.3 V reverse stand-off voltage (VRWM) and 10 A peak pulse current (tp = 8/20 µs). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | BORN |
| Package | DFN1006-2 |
| Category | TVS/Fuse/Board Level Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | | | 80 | W | tp=8/20μs | 2 |
| Peak Pulse Current | Ipp | | | 10 | A | tp=8/20μs (note 1) | 2 |
| ESD per IEC 61000-4-2 (Air) | VESD | | | 25 | kV | IEC 61000-4-2 air | 2 |
| ESD per IEC 61000-4-2 (Contact) | VESD | | | 15 | kV | IEC 61000-4-2 contact | 2 |
| Lead Soldering Temperature | TL | | | 260 | ℃ | 10 seconds | 2 |
| Junction Temperature | TJ | -55 | | 125 | ℃ | | 2 |
| Storage Temperature | Tstg | -55 | | 125 | ℃ | | 2 |
| Reverse Stand-Off Voltage | VRWM | | | 3.3 | V | | 2 |
| Reverse Breakdown Voltage | VBR | 3.8 | | | V | IT=1mA | 2 |
| Reverse Leakage Current | IR | | 0.1 | 0.2 | μA | VRWM=3.3V, T=25℃ | 2 |
| Peak Pulse Current | IPP | | | 10 | A | tp=8/20μs | 2 |
| Clamping Voltage | VCL | | | 8 | V | IPP=16A, tp=100ns | 2 |
| Clamping Voltage | VC | | | 6 | V | IPP=5A, tp=8/20μs | 2 |
| Dynamic resistance | RDYN | | | 0.2 | Ω | | 2 |
| Junction Capacitance | Cj | | 12 | 18 | pF | VR=0V, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `BESD3V3B15G`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2 (KiCad packages3D, STEP)
- 3D model files: `besd3v3b15g-etched.step` / `besd3v3b15g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `besd3v3b15g.step` / `besd3v3b15g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [BORN datasheet](docs/besd3v3b15g-datasheet.pdf) (4 pp, sha256 `8030efc48fc63ca9`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/besd3v3b15g-datasheet.pdf)