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BDX53B

Public Made by Adom

by adom

STMicroelectronics Bipolar Transistors - BJT, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BDX53B

STMicroelectronics · Bipolar Transistors - BJT · TO-220

BDX53B from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN Darlington (BDX53B); emitter-base voltage limited to 5 V (VEBO) and base current to 0.2 mA per Table 2.
2 C passive Collector (also connected to the mounting tab); VCBO and VCEO are 80 V for BDX53B, with collector current up to 8 A continuous and 12 A peak.
3 E passive Emitter of the Darlington, with an integrated antiparallel collector-emitter diode (VF up to 2.5 V at IF = 3 A).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter sustaining voltage VCEO(sus) 80 V IC = 100 mA, IB = 0, pulsed 300 µs, duty 1.5%, BDX53B 3
Collector cut-off current ICBO 0.2 mA VCB = 80 V, IE = 0, BDX53B 3
Collector cut-off current ICEO 0.5 mA VCE = 40 V, IB = 0, BDX53B 3
Emitter cut-off current IEBO 2 mA VEB = 5 V, IC = 0 3
Collector-emitter saturation voltage VCE(sat) 2 V IC = 3 A; IB = 12 mA 3
Base-emitter saturation voltage VBE(sat) 2.5 V IC = 3 A; IB = 12 mA 3
DC current gain hFE 750 IC = 3 A; VCE = 3 V 3
Diode forward voltage VF 2.5 V IF = 3 A; IF = 8 A 3
Collector-base voltage VCBO 80 V IE = 0 2
Collector-emitter voltage VCEO 80 V IB = 0 2
Emitter-base voltage VEBO 5 V IC = 0 2
Collector current IC 8 A 2
Collector peak current (repetitive) ICM 12 A 2
Base current IB 0.2 mA 2
Total dissipation PTOT 60 W Tc = 25°C 2
Storage temperature Tstg -65 150 °C 2
Max. operating junction temperature TJ 150 °C 2

CAD (KiCad official)

  • Symbol: BDX53B
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: bdx53b-etched.step / bdx53b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bdx53b.step / bdx53b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (7 pp, sha256 3b8956304ef88eac, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF