component

BDFN2C4R51V50

Public Made by Adom

by adom

BORN ESD And Surge Protection (TVS/ESD), DFN1006-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcircuit protectionbdfn2c4r51v50factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
bdfn2c4r51v50 / README.md
History Download
Ray Publish 0.1.0 e3421e5 13d ago

BDFN2C4R51V50

BORN · ESD And Surge Protection (TVS/ESD) · DFN1006-2

BDFN2C4R51V50 from BORN, in a DFN1006-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin 1 passive One terminal of the bidirectional silicon-avalanche ESD protection diode, rated for a 4.5 V reverse stand-off voltage (VRWM) and IEC 61000-4-2 ±30 kV contact and air discharge.
2 Pin 2 passive The other terminal of the bidirectional silicon-avalanche ESD protection diode, rated for a 4.5 V reverse stand-off voltage (VRWM) and IEC 61000-4-2 ±30 kV contact and air discharge.

Key specifications

Parameter Value
Manufacturer BORN
Package DFN1006-2
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Leakage Current IR 0.1 μA VRWM=4.5V,T=25℃ 2
Reverse Breakdown Voltage VBR 4.7 V IT=1mA 2
Reverse Stand-Off Voltage VRWM 4.5 V 2
Peak Pulse Current IPP 40 A tp =8/20μs 2
Clamping Voltage (IPP=1A) VC 5.5 V IPP=1A,tp=8/20μs 2
Clamping Voltage (IPP=20A) VC 7.5 V IPP=20A,tp=8/20μs 2
Clamping Voltage (IPP=40A) VC 13 V IPP=40A,tp=8/20μs 2
Junction Capacitance Cj 90 pF VR = 0V, f = 1MHz 2
Peak Pulse Power PPP 500 Watts tp =8/20μs 2
Peak Pulse Current Ipp 40 A tp =8/20μs (note1) 2
ESD per IEC 61000-4-2 (Air) VESD 30 kV IEC 61000-4-2 air 2
ESD per IEC 61000-4-2 (Contact) VESD 30 kV IEC 61000-4-2 contact 2
Lead Soldering Temperature TL 260 ℃ 10 seconds 2
Junction Temperature TJ -55 125 ℃ 2
Storage Temperature Tstg -55 125 ℃ 2

CAD (KiCad official)

  • Symbol: BDFN2C4R51V50
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2 (KiCad packages3D, STEP)
  • 3D model files: bdfn2c4r51v50-etched.step / bdfn2c4r51v50-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bdfn2c4r51v50.step / bdfn2c4r51v50.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BORN datasheet (4 pp, sha256 43353c87ebec1261, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF