component
BD9G341AEFJ-LBE2
Public Made by Adomby adom
ROHM Semicon Global Sourcing Parts, SOP-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBD9G341AEFJ-LBE2
ROHM Semicon · Global Sourcing Parts · SOP-8-EP
BD9G341AEFJ-LBE2 from ROHM Semicon, in a SOP-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | LX | output | Switching node, to be connected as near as possible to the Schottky barrier diode and the inductor. |
| 2 | GND | power_in | Ground pin; the GND pattern is kept along the current line from the input capacitor to the output capacitor. |
| 3 | VC | passive | Output of the internal error amplifier; the phase compensation network is connected between this pin and GND. |
| 4 | FB | input | Voltage feedback pin, the error-amplifier input, regulated to a DC set point of 1.0 V. |
| 5 | RT | passive | Sets the internal oscillator frequency through a single resistor to GND; recommended frequency range is 50 kHz to 750 kHz (47 kΩ gives 200 kHz). |
| 6 | EN | input | Shutdown pin: below 1.3 V the regulator is in a low-power state, 1.3 V to 2.4 V gives standby mode, and above 2.6 V the regulator is operational; an external divider can set the UVLO threshold, and an open pin is pulled up by a 10 µA source. |
| 7 | BST | passive | Boost input for the bootstrap capacitor, which is required between BST and LX; a 0.1 µF ceramic capacitor is recommended. |
| 8 | VCC | power_in | Input supply voltage pin; the recommended power supply voltage range is 12 V to 76 V. |
| 9 | Thermal Pad | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8-EP |
| Category | Global Sourcing Parts |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Detect Voltage | Vccuv | 10.4 | 11 | 11.6 | V | 5 | |
| Hysteresis width | Vuvhy | 200 | 300 | mV | 5 | ||
| FB threshold voltage | VFBN | 0.985 | 1 | 1.015 | V | Ta=25°C | 5 |
| FB threshold voltage | VFBA | 0.98 | 1 | 1.02 | V | Ta=-40 to 85°C | 5 |
| FB Input bias current | IFB | -1 | 0 | 1 | uA | VFB=2.0V | 5 |
| VC source current | Isource | 15 | 40 | 65 | uA | 5 | |
| VC sink current | Isink | -65 | -40 | -15 | uA | 5 | |
| Soft start time | Tsoft | 15 | 20 | 25 | msec | 5 | |
| Error amplifier DC gain | AVEA | 10000 | V/V | 5 | |||
| Trans conductance | GEA | 300 | µA/V | 5 | |||
| VC to switch current trans conductance | GCS | 10 | A/V | 5 | |||
| Detect current | Iocp | 3.5 | 6 | A | 5 | ||
| OCP latch count | NOCP | 2 | count | 5 | |||
| OCP latch hold time | TOCP | 15 | 20 | 25 | msec | 5 | |
| Lx NMOS ON resistance | RonH | 150 | mΩ | 5 | |||
| EN Pin inner REG on voltage | VENON | 1.3 | 2.4 | V | 5 | ||
| EN Pin IC output on threshold | Venuv | 2.52 | 2.6 | 2.68 | V | IC on or off threshold | 5 |
| EN pin input current | IEN | 9 | 10 | 11 | µA | VEN=3V | 5 |
| Oscillator frequency | Fosc | 180 | 200 | 220 | kHz | RT:R=47kΩ | 5 |
| Forced off time | Toff | 500 | nsec | 5 | |||
| Stand-by current of VCC | Ist | 0 | 10 | µA | VEN=0V | 5 | |
| Circuit current of VCC | Icc | 1.5 | 2 | mA | FB=1.5V | 5 | |
| Power Supply Voltage | VCC | 12 | 76 | V | 5 | ||
| Output voltage | VOUT | 1 | V | Max is VCC (Note3); see review_required | 5 | ||
| Output current | IOUT | 3 | A | 5 | |||
| Oscillator frequency | Fosc | 50 | 750 | kHz | 5 | ||
| Maximum input voltage | VCC | 80 | V | 4 | |||
| BST to GND voltage | VBST | 85 | V | 4 | |||
| Maximum input current | Imax | 3.5 | A | 4 | |||
| BST to LX voltage | ⊿VBST | 15 | V | 4 | |||
| EN to GND voltage | VEN | 80 | V | 4 | |||
| LX to GND voltage | VLX | 80 | V | 4 | |||
| FB to GND voltage | VFB | 7 | V | 4 | |||
| Power Dissipation | Pd | 3.76 | W | Mounted on 70×70×1.6t mm 4-layer board; reduce by 5.4mW per °C above 25°C | 4 | ||
| Operating Temperature | Topr | -40 | 85 | °C | 4 | ||
| Storage Temperature | Tstg | -55 | 150 | °C | 4 | ||
| Junction Temperature | Tjmax | 150 | °C | 4 |
CAD (KiCad official)
- Symbol:
BD9G341AEFJ-LBE2 - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm - 3D model: SOP-8-EP (KiCad packages3D, STEP)
- 3D model files:
bd9g341aefj-lbe2-etched.step/bd9g341aefj-lbe2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bd9g341aefj-lbe2.step/bd9g341aefj-lbe2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (29 pp, sha256
b6778e40c4da988a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).