component
BD9E102FJ-GE2
Public Made by Adomby adom
ROHM SEMICONDUCTOR Global Sourcing Parts, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownBD9E102FJ-GE2
ROHM SEMICONDUCTOR · Global Sourcing Parts · SOIC-8
BD9E102FJ-GE2 from ROHM SEMICONDUCTOR, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BOOT | passive | Bootstrap pin: connect a 0.1 µF capacitor between this terminal and SW; its voltage is the gate drive voltage of the high-side MOSFET. |
| 2 | VIN | power_in | Power supply terminal for the switching regulator and control circuit (7.0V to 26V input); a 10 µF ceramic capacitor is recommended. |
| 3 | EN | input | Enable input: low level (0.8 V or lower) forces shutdown, high level (2.0 V or higher) enables the device; must be terminated. |
| 4 | AGND | power_in | Ground terminal for the control circuit. |
| 5 | FB | input | Inverting input node for the gm error amplifier, used with a resistor divider to set the output voltage. |
| 6 | COMP | passive | Input for the gm error amplifier output and output switch current comparator; connect frequency phase compensation components here. |
| 7 | PGND | power_in | Ground terminal for the output stage of the switching regulator. |
| 8 | SW | output | Switch node connected to the source of the high-side MOSFET and drain of the low-side MOSFET; connect a 0.1 µF bootstrap capacitor to BOOT and a 6.8 µH inductor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM SEMICONDUCTOR |
| Package | SOIC-8 |
| Category | Global Sourcing Parts |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Current in Operating | Iopr | 250 | 500 | µA | VFB = 0.9V | 5 | |
| Supply Current in Standby | Istby | 0 | 10 | µA | VEN = 0V | 5 | |
| Reference Voltage | VFB | 0.784 | 0.8 | 0.816 | V | 5 | |
| FB Input Current | IFB | -1 | 0 | 1 | µA | VFB = 0V | 5 |
| Switching frequency | FOSC | 484 | 570 | 656 | kHz | 5 | |
| Maximum Duty ratio | Maxduty | 88 | 93 | 98 | % | 5 | |
| Over Current limit | ILIMIT | 1.9 | 2.2 | 2.5 | A | 5 | |
| UVLO detection voltage | VUVLO | 6.1 | 6.4 | 6.7 | V | VIN falling | 5 |
| UVLO hysteresis voltage | VUVLOHYS | 100 | 200 | 300 | mV | 5 | |
| EN high-level input voltage | VENH | 2 | V | max printed as VIN | 5 | ||
| EN low-level input voltage | VENL | 0.8 | V | 5 | |||
| EN Input current | IEN | 2 | 4 | 8 | µA | VEN = 3V | 5 |
| Soft Start time | TSS | 1.2 | 2.5 | 5 | msec | 5 | |
| High-side FET on-resistance | RONH | 250 | mΩ | ISW = 100mA | 5 | ||
| Low-side FET on-resistance | RONL | 200 | mΩ | ISW = 100mA | 5 | ||
| Supply Voltage | VIN | 7 | 26 | V | 5 | ||
| Output Current | IOUT | 1 | A | 5 | |||
| Output Voltage Range | VRANGE | 1 | V | max is VIN × 0.7 V | 5 | ||
| Supply Voltage | VIN | -0.3 | 30 | V | Ta = 25C | 5 | |
| EN Input Voltage | VEN | -0.3 | 30 | V | Ta = 25C | 5 | |
| Voltage from GND to BOOT | VBOOT | -0.3 | 35 | V | Ta = 25C | 5 | |
| Voltage from SW to BOOT | ⊿VBOOT | -0.3 | 7 | V | Ta = 25C | 5 | |
| FB Input Voltage | VFB | -0.3 | 7 | V | Ta = 25C | 5 | |
| COMP Input Voltage | VCOMP | -0.3 | 7 | V | Ta = 25C | 5 | |
| SW Input Voltage | VSW | -0.5 | 30 | V | Ta = 25C | 5 | |
| Output Current | IOUT | 1 | A | Ta = 25C | 5 | ||
| Allowable Power Dissipation | Pd | 0.675 | W | 70 mm x 70 mm x 1.6 mm 1-layer glass epoxy board, derated by 5.4 mW/C for Ta ≥ 25C | 5 | ||
| Operating Ambient Temperature Range | Topr | -40 | 85 | C | 5 | ||
| Storage Temperature Range | Tstg | -55 | 150 | C | 5 | ||
| Thermal resistance junction to ambient | θj-a | 185.2 | C/W | SOP-J8, 1 layer board (back side copper foil area: 70mm×70mm) | 24 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | Provide the input capacitor as close to the IC VIN terminal as possible on the same plane as the IC. If there is any unused area on the PCB, provide a copper foil plane for the ground node to assi | 23 |
CAD (KiCad official)
- Symbol:
BD9E102FJ-GE2 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
bd9e102fj-ge2-etched.step/bd9e102fj-ge2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bd9e102fj-ge2.step/bd9e102fj-ge2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM SEMICONDUCTOR datasheet (32 pp, sha256
c8767cc25b673053, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).