component
BD9B400MUV-E2
Public Made by Adomby adom
ROHM DC-DC Converters, VQFN-16-EP(3x3). Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+12−9@@ -32,7 +32,7 @@ "number": "1", "name": "PVIN", "type": "power_in",- "description": "Power supply input to the switching regulator output stage (2.7 V to 5.5 V). Tied in parallel with pin 2. Requires a 22\u00b5F ceramic bypass capacitor."+ "description": "Power supply input to the switching regulator output stage (2.7 V to 5.5 V). Tied in parallel with pin 2. Requires a 22µF ceramic bypass capacitor." }, { "number": "2",@@ -80,13 +80,13 @@ "number": "9", "name": "SS", "type": "passive",- "description": "Soft-start timing. Connect a capacitor to GND to set the output-voltage rise time; internal soft-start current ISS \u2248 1 \u00b5A (typ). Internal soft-start defaults to 1 ms (typ) when SS is open."+ "description": "Soft-start timing. Connect a capacitor to GND to set the output-voltage rise time; internal soft-start current ISS ≈ 1 µA (typ). Internal soft-start defaults to 1 ms (typ) when SS is open." }, { "number": "10", "name": "SW", "type": "power_out",- "description": "Switch node - source of the high-side MOSFET and drain of the low-side MOSFET. Pins 10, 11, 12 are internally connected; connect the output inductor here (0.47\u00b5H-1\u00b5H for FREQ=L, 1\u00b5H-1.5\u00b5H for FREQ=H)."+ "description": "Switch node - source of the high-side MOSFET and drain of the low-side MOSFET. Pins 10, 11, 12 are internally connected; connect the output inductor here (0.47µH-1µH for FREQ=L, 1µH-1.5µH for FREQ=H)." }, { "number": "11",@@ -98,31 +98,31 @@ "number": "12", "name": "SW", "type": "power_out",- "description": "Switch node (paralleled with pins 10 and 11). A 0.1\u00b5F bootstrap capacitor between SW and BOOT is required."+ "description": "Switch node (paralleled with pins 10 and 11). A 0.1µF bootstrap capacitor between SW and BOOT is required." }, { "number": "13", "name": "BOOT", "type": "passive",- "description": "Bootstrap capacitor node for the high-side MOSFET gate drive. Connect a 0.1\u00b5F ceramic capacitor between BOOT and SW; V(BOOT-SW) is the high-side gate-drive supply (~5 V)."+ "description": "Bootstrap capacitor node for the high-side MOSFET gate drive. Connect a 0.1µF ceramic capacitor between BOOT and SW; V(BOOT-SW) is the high-side gate-drive supply (~5 V)." }, { "number": "14", "name": "PGD", "type": "output",- "description": "Power-Good open-drain output. Requires an external pull-up resistor. Goes high-Z (High) when VFB exceeds 80% of 0.8 V; RPGD \u2248 100 \u03a9 (typ), max sink 1 mA gives VOL \u2248 0.1 V."+ "description": "Power-Good open-drain output. Requires an external pull-up resistor. Goes high-Z (High) when VFB exceeds 80% of 0.8 V; RPGD ≈ 100 Ω (typ), max sink 1 mA gives VOL ≈ 0.1 V." }, { "number": "15", "name": "EN", "type": "input",- "description": "Enable input. Drive Low (\u22640.8 V) to enter shutdown; drive High (\u22652.0 V) to enable the device. IEN \u2248 5 \u00b5A @ EN=5V. Must be terminated (no internal pull)."+ "description": "Enable input. Drive Low (≤0.8 V) to enter shutdown; drive High (≥2.0 V) to enable the device. IEN ≈ 5 µA @ EN=5V. Must be terminated (no internal pull)." }, { "number": "16", "name": "AVIN", "type": "power_in",- "description": "Analog/control-circuit supply (2.7 V to 5.5 V). Must be connected to PVIN. A 0.1\u00b5F ceramic bypass capacitor is recommended."+ "description": "Analog/control-circuit supply (2.7 V to 5.5 V). Must be connected to PVIN. A 0.1µF ceramic bypass capacitor is recommended." }, { "number": "17",@@ -198,5 +198,8 @@ "docs/bd9b400muv-e2-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ]+ ],+ "visibility": {+ "public": true+ } }