component
BD9A600MUV-E2
Public Made by Adomby adom
ROHM Semicon DC-DC Converters, VQFN-16-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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BD9A600MUV-E2
ROHM Semicon · DC-DC Converters · VQFN-16-EP(3x3)
BD9A600MUV-E2 from ROHM Semicon, in a VQFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | PVIN | power_in | Power supply terminal for the switching regulator output stage; a 10µF ceramic capacitor is recommended. |
| 2 | PVIN | power_in | Power supply terminal for the switching regulator output stage; a 10µF ceramic capacitor is recommended. |
| 3 | PGND | power_in | Ground terminal for the output stage of the switching regulator. |
| 4 | PGND | power_in | Ground terminal for the output stage of the switching regulator. |
| 5 | AGND | power_in | Ground terminal for the control circuit. |
| 6 | FB | input | Inverting input of the gm error amplifier; output voltage is set by a resistor divider (reference 0.8V typ). |
| 7 | ITH | passive | Gm error amplifier output and output switch current comparator input; connect a phase compensation resistor and capacitor here. |
| 8 | MODE | input | Low (0.2V or lower) forces fixed frequency PWM mode; High (0.8V or higher) enables SLLM control with automatic switching between SLLM and PWM. |
| 9 | SS | passive | Soft start time setting terminal; output voltage rise time is set by a capacitor connected to this pin. |
| 10 | SW | power_out | Switch node connected to the high-side MOSFET source and low-side MOSFET drain; connect the inductor and a 0.47µF bootstrap capacitor to BOOT. |
| 11 | SW | power_out | Switch node connected to the high-side MOSFET source and low-side MOSFET drain; connect the inductor and a 0.47µF bootstrap capacitor to BOOT. |
| 12 | SW | power_out | Switch node connected to the high-side MOSFET source and low-side MOSFET drain; connect the inductor and a 0.47µF bootstrap capacitor to BOOT. |
| 13 | BOOT | passive | Connect a 0.47µF bootstrap capacitor between this pin and SW; its voltage is the high-side MOSFET gate drive voltage. |
| 14 | PGD | output | Open-drain Power Good output requiring a pull-up resistor; output goes High when FB is within ±7% of 0.8V (typ). |
| 15 | EN | input | Low (0.8V or lower) forces shutdown, High (2.0V or higher) enables the device; this pin must be terminated. |
| 16 | AVIN | power_in | Power supply for the control circuit; a 0.1µF ceramic capacitor is recommended. |
| 17 | E-PAD | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | VQFN-16-EP(3x3) |
| Category | Power Supply Chip |
| Pins | 17 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply Voltage | VPVIN, VAVIN | -0.3 | 7 | V | Ta = 25°C | 5 | |
| EN Voltage | VEN | -0.3 | 7 | V | Ta = 25°C | 5 | |
| MODE Voltage | VMODE | -0.3 | 7 | V | Ta = 25°C | 5 | |
| PGD Voltage | VPGD | -0.3 | 7 | V | Ta = 25°C | 5 | |
| Voltage from GND to BOOT | VBOOT | -0.3 | 14 | V | Ta = 25°C | 5 | |
| Voltage from SW to BOOT | ΔVBOOT | -0.3 | 7 | V | Ta = 25°C | 5 | |
| FB Voltage | VFB | -0.3 | 7 | V | Ta = 25°C | 5 | |
| ITH Voltage | VITH | -0.3 | 7 | V | Ta = 25°C | 5 | |
| SW Voltage | VSW | -0.3 | V | max is VPVIN + 0.3 V | 5 | ||
| Allowable Power Dissipation | Pd | 2.66 | W | 70mm x 70mm x 1.6mm 4-layer board, derate 21.3mW above 25°C | 5 | ||
| Operating Temperature Range | Topr | -40 | 85 | °C | 5 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 5 | ||
| Supply Voltage | VPVIN, VAVIN | 2.7 | 5.5 | V | Ta = -40°C to +85°C | 5 | |
| Output Current | IOUT | 6 | A | Pd, ASO should not be exceeded | 5 | ||
| Output Voltage Range | VRANGE | 0.8 | V | max is VPVIN × 0.7 V | 5 | ||
| Standby Supply Current | ISTB | 0 | 10 | µA | EN= GND | 6 | |
| Operating Supply Current | ICC | 400 | 600 | µA | IOUT= 0mA, Non-switching | 6 | |
| UVLO Detection Voltage | VUVLO1 | 2.35 | 2.45 | 2.55 | V | VIN Falling | 6 |
| UVLO Release Voltage | VUVLO2 | 2.425 | 2.55 | 2.7 | V | VIN Rising | 6 |
| EN Input High Level Voltage | VENH | 2 | V | max is VAVIN | 6 | ||
| EN Input Low Level Voltage | VENL | 0.8 | V | min is AGND | 6 | ||
| EN Input Current | IEN | 5 | 10 | µA | EN= 5V | 6 | |
| MODE Input High Level Voltage | VMODEH | 0.2 | 0.4 | 0.8 | V | 6 | |
| MODE Input Current | IMODE | 10 | 20 | µA | MODE= 5V | 6 | |
| FB Terminal Voltage | VFB | 0.792 | 0.8 | 0.808 | V | 6 | |
| FB Input Current | IFB | 0 | 1 | µA | FB= 0.8V | 6 | |
| ITH Sink Current | ITHSI | 10 | 20 | 40 | µA | FB= 0.9V | 6 |
| ITH Source Current | ITHSO | 10 | 20 | 40 | µA | FB= 0.7V | 6 |
| Soft Start Time | TSS | 0.5 | 1 | 2 | ms | With internal constant | 6 |
| Soft Start Current | ISS | 0.9 | 1.8 | 3.6 | µA | 6 | |
| Switching Frequency | FOSC | 800 | 1000 | 1200 | kHz | 6 | |
| Power Good Falling (Fault) Voltage | VPGDFF | 87 | 90 | 93 | % | OUTPUT voltage falling | 6 |
| Power Good Rising (Good) Voltage | VPGDRG | 90 | 93 | 96 | % | OUTPUT voltage rising | 6 |
| Power Good Rising (Fault) Voltage | VPGDRF | 107 | 110 | 113 | % | OUTPUT voltage rising | 6 |
| Power Good Falling (Good) Voltage | VPGDFG | 104 | 107 | 110 | % | OUTPUT voltage falling | 6 |
| PGD Output Leakage Current | ILKPGD | 0 | 5 | µA | PGD= 5V | 6 | |
| Power Good ON Resistance | RPGD | 50 | 100 | Ω | 6 | ||
| Power Good Low Level Voltage | PGDVL | 0.05 | 0.1 | V | IPGD= 1mA | 6 | |
| High Side FET ON Resistance | RONH | 25 | 50 | mΩ | BOOT, SW= 5V | 6 | |
| Low Side FET ON Resistance | RONL | 25 | 50 | mΩ | 6 | ||
| High Side Output Leakage Current | RILH | 0 | 10 | µA | Non-switching | 6 | |
| Low Side Output Leakage Current | RILL | 0 | 10 | µA | Non-switching | 6 | |
| Short Circuit Protection Detection Voltage | VSCP | 0.28 | 0.4 | 0.52 | V | 6 | |
| Thermal Resistance, 4-layer board (5505mm2 copper) | θJA | 47 | °C/W | 4-layer board, surface copper foil 5505mm2 | 26 | ||
| Thermal Resistance, 4-layer board (6.28mm2 copper) | θJA | 70.62 | °C/W | 4-layer board, surface copper foil 6.28mm2 | 26 | ||
| Thermal Resistance, 1-layer board | θJA | 201.6 | °C/W | 1-layer board, surface copper foil 6.28mm2 | 26 | ||
| Thermal Resistance, IC only | θJA | 462.9 | °C/W | IC only | 26 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | Connect an input capacitor as close as possible to the IC PVIN terminal on the same plane as the IC. If there is any unused area on the PCB, provide a copper foil plane for the GND node to assist | 25 |
CAD (KiCad official)
- Symbol:
BD9A600MUV-E2 - Footprint:
Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm - 3D model: VQFN-16-EP(3x3) (KiCad packages3D, STEP)
- 3D model files:
bd9a600muv-e2-etched.step/bd9a600muv-e2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bd9a600muv-e2.step/bd9a600muv-e2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (35 pp, sha256
70799585b93019b8, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).