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BD90620EFJ-CE2

ROHM Semicon · DC-DC Converters · HTSOP-8-EP

BD90620EFJ-CE2 from ROHM Semicon, in a HTSOP-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RT passive Switching frequency setting resistor connection; the resistor sets the switching frequency in the 50 kHz to 600 kHz range.
2 SW output Switching output of the integrated Pch POWER MOSFET.
3 EN / SYNC input Enable and external clock input; normal operation above 2.6 V, shutdown below 0.8 V, and an external clock within ±20 % of the RT-set frequency synchronizes switching.
4 GND power_in Ground.
5 VC output Error amplifier output that controls the switching duty and connects to the external phase compensation circuit.
6 VIN power_in Power supply input (3.5 V to 36 V, initial startup over 3.9 V); must be shorted to PVIN.
7 PVIN power_in Power supply input for the power stage; must be shorted to VIN.
8 FB input Output voltage feedback input compared with the 0.8 V (Typ) reference of the error amplifier.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package HTSOP-8-EP
Category Power Management ICs
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating Output Switch Current of Overcurrent Protection ISWLIMIT20 2.5 4.3 A Ta = -40 °C to +125 °C, VIN = 13.2 V, VEN/SYNC = 5 V 6
Shutdown Circuit Current ISDN 0 5 μA VEN / SYNC = 0 V, Ta < 105 °C 6
Circuit Current IIN 2.2 3.3 mA Io = 0 A, VFB = 2 V 6
POWER MOSFET ON Resistance RON 0.16 0.32 Ω ISW = 30 mA 6
Output Leak Current IOLK 0 5 μA VIN = 36 V, VEN / SYNC = 0 V, Ta < 105 °C 6
Reference Voltage 1 VREF1 0.792 0.8 0.808 V VVC = VFB, Ta = 25 °C 6
Reference Voltage 2 VREF2 0.784 0.8 0.816 V VVC = VFB 6
Input Bias Current IB -1 1 μA 6
VC Sink Current IVCSINK -76.5 -54 -31.5 μA VVC = 1.25 V, VFB = 1.3 V 6
VC Source Current IVCSOURCE 31.5 54 76.5 μA VVC = 1.25 V, VFB = 0.3 V 6
Trans Conductance GEA 135 270 540 μA / V IVC = ±10 μA, VVC = 1.25 V 6
Soft Start Time TSS 1.13 1.38 1.63 ms RRT = 27 kΩ 6
Switching Frequency fSW 450 500 550 kHz RRT = 27 kΩ 6
Enable / Sync Threshold Voltage VEN / SYNC 0.8 1.9 2.6 V 6
SYNC Current IEN / SYNC 23 50 μA VEN / SYNC = 5 V 6
UVLO ON Mode Voltage VUVLO_ON 3.24 3.5 V 6
UVLO OFF Mode Voltage VUVLO_OFF 3.52 3.9 V 6
Reference Voltage Input Regulation ΔVREF 0.5 % 3.5 V ≤ VIN ≤ 36 V 6
Current Sense Trans Conductance GCS 5.2 A / V 6
Frequency Input Regulation ΔfSW 1 % 3.5 V ≤ VIN ≤ 36 V 6
UVLO Hysteresis VUVLO_HYS 280 mV 6
Input Power Supply Voltage VIN, PVIN -0.3 42 V Ta = 25 °C 5
EN / SYNC Pin Voltage VEN / SYNC -0.3 V Upper limit VIN; Ta = 25 °C 5
RT, VC, FB Pin Voltage VRT, VVC, VFB -0.3 7 V Ta = 25 °C 5
Power Dissipation HTSOP-J8 Pd 3.1 W Reduce by 24.8 mW / °C above 25 °C; 4-layer board 5
Storage Temperature Range Tstg -55 150 °C 5
Maximum Junction Temperature Tjmax 150 °C 5
Operating Power Supply Voltage VIN, PVIN 3.5 36 V Initial startup is over 3.9 V 5
Operating Temperature Range Topr -40 125 °C 5
Output Switch Current ISW20 2.5 A BD90620HFP/EFJ-C; includes output DC current and ripple current 5
Output Voltage VO 0.8 V Upper limit VIN 5
Min ON Pulse Width TON_MIN 250 ns 5
Switching Frequency fSW 50 600 kHz 5
Switching Frequency Set Resistance RRT 22 330 kΩ 5
Synchronous Operation Frequency Range fSYNC 50 600 kHz 5
Synchronous Operation Frequency fSYNC_RT -20 20 % 5
External Clock ON Duty DSYNC 10 90 % 5
Capacitance of Input Capacitor CIN 2.4 µF Including temperature, DC bias and aging change 5
Thermal Resistance Junction-Ambient, 1-layer PCB (HTSOP-J8) θja 189.4 °C / W 1-layer PCB, 114.3 mm x 76.2 mm x 1.60 mmt 32
Thermal Resistance Junction-Ambient, 4-layer PCB (HTSOP-J8) θja 40.3 °C / W 4-layer PCB, 114.3 mm x 76.2 mm x 1.60 mmt 32
Thermal Resistance Junction-Case Top (HTSOP-J8) θjc 44 °C / W Top 32
Thermal Resistance Junction-Case Bottom (HTSOP-J8) θjc 14 °C / W Bottom 32
Junction-Top Characterization Parameter, 1-layer PCB (HTSOP-J8) ψJT 21 °C / W 1-layer PCB 32
Junction-Top Characterization Parameter, 4-layer PCB (HTSOP-J8) ψJT 5 °C / W 4-layer PCB 32

CAD (KiCad official)

  • Symbol: BD90620EFJ-CE2
  • Footprint: Package_SO:HTSOP-8-1EP_3.9x4.9mm_P1.27mm_EP2.4x3.2mm
  • 3D model: HTSOP-8-EP (KiCad packages3D, STEP)
  • 3D model files: bd90620efj-ce2-etched.step / bd90620efj-ce2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd90620efj-ce2.step / bd90620efj-ce2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (43 pp, sha256 10ed871c6d5e80ea, retrieved 2026-10-31, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF