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BD7692FJ-E2

Public Made by Adom

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ROHM Semicon AC-DC Controllers And Regulators, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BD7692FJ-E2

ROHM Semicon · AC-DC Controllers And Regulators · SOIC-8

BD7692FJ-E2 from ROHM Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VS power_in Feedback input for output voltage sensing with 2.5 V (typ) Gm amplifier reference, VS short protection below 0.300 V, dynamic OVP above 2.625 V and static OVP above 2.725 V (typ); absolute maximum -0.3 to +6.5 V.
2 EO bidirectional Error amplifier output (Gm amplifier source/sink 50 µA typ) that is discharged on UVLO or VS short; absolute maximum -0.3 to +6.5 V.
3 RT bidirectional Maximum frequency/ON width setting pin using external resistor RRT of 39, 68, 120, 220 or 470 kΩ only; absolute maximum -0.3 to +6.5 V.
4 OVP input Over voltage protection input that stops OUT above 2.700 V (typ) and recovers below 2.600 V (typ); absolute maximum -0.3 to +6.5 V.
5 IS input Zero current detection (-10 mV typ) and over current detection (-0.60 V typ) input; absolute maximum -6.5 to +0.3 V.
6 GND power_in Ground pin of the IC.
7 OUT output External MOSFET gate drive output clamped to 12.0 V (typ), peak source -0.5 A and sink +1.0 A, absolute maximum -0.3 to +15.0 V.
8 VCC power_in Supply input with recommended range 10.0 to 26.0 V, UVLO on at 12.0 V and off at 9.0 V (typ), needs 10 µF or more capacitor; absolute maximum 28.0 V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOIC-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum Voltage 1 VMAX1 -0.3 28 V VCC 9
Maximum Voltage 2 VMAX2 -0.3 15 V OUT 9
Maximum Voltage 3 VMAX3 -0.3 6.5 V OVP, RT, VS, EO 9
Maximum Voltage 4 VMAX4 -6.5 0.3 V IS (Exclude 20 ms after input voltage injection) 9
IS Pin Maximum Current IIS -20 mA IS (20 ms or less after input voltage injection) 9
OUT Pin Output Peak Current 1 IOUT1 -0.5 A Source current 9
OUT Pin Output Peak Current 2 IOUT2 1 A Sink current 9
Maximum Junction Temperature Tjmax 150 °C 9
Storage Temperature Range Tstg -55 150 °C 9
Supply Voltage VCC 10 15 26 V VCC Voltage 9
Operation Temperature Topr -40 25 105 °C 9
VCC Pin Connection Capacity CVCC 10 μF 10.0 or more, Ta=25 °C 9
Thermal Resistance Junction to Ambient (1s) θJA 149.3 °C/W SOP-J8, 1s board 9
Thermal Resistance Junction to Ambient (2s2p) θJA 76.9 °C/W SOP-J8, 2s2p board 9
Junction to Top Characterization Parameter (1s) ΨJT 18 °C/W SOP-J8, 1s board 9
Junction to Top Characterization Parameter (2s2p) ΨJT 11 °C/W SOP-J8, 2s2p board 9
Circuit Current (ON)1 ION1 470 1000 µA VS=1.0 V, EO=OPEN, RRT=120 kΩ, OVP=OPEN 10
Circuit Current (ON)2 ION2 530 1200 µA VS=1.0 V, EO=OPEN, RRT=120 kΩ, OVP=0 V (PULSE operation) 10
Start Up Current ION3 55 110 µA VCC=11 V 10
VCC UVLO Voltage1 VUVLO1 11 12 13 V VCC rise 10
VCC UVLO Voltage2 VUVLO2 8 9 10 V VCC drop 10
VCC UVLO Hysteresis VUVLO3 3 V VUVLO3 = VUVLO1 - VUVLO2 10
VS Pin Pull-up Current IVS 0.7 µA 10
Gm Amplifier Reference Voltage 1 VAMP 2.465 2.5 2.535 V 10
Gm Amplifier Line Regulation VAMP_LINE -20 -1 mV VCC=10 V to 26 V 10
Gm Amplifier Trans Conductance TVS 45 70 95 µA/V EO=2.5 V, VGUP <VS<VOVP 10
Gm Amplifier Source Current IEO_SOURCE 30 50 70 µA VS=1.0 V 10
Gm Amplifier Sink Current IEO_SINK 30 50 70 µA VS=3.5 V 10
Off Threshold Voltage VOFF_TH 0.15 0.3 0.6 V 10
EO Discharge Current IEO 1 2 4 mA VCC=11 V, EO=1.0 V 10
Maximum ON Width1 tMAXDUTY1 8 10 12 µs RRT=39 kΩ, EO=4.0 V 10
Maximum ON Width2 tMAXDUTY2 16 20 24 µs RRT=120 kΩ, EO=4.0 V 10
Maximum ON Width3 tMAXDUTY3 24 30 36 µs RRT=470 kΩ, EO=4.0 V 10
Maximum Frequency1 fMAXDUTY1 493 580 667 kHz RRT=39 kΩ, EO=0.3 V 10
Maximum Frequency2 fMAXDUTY2 382 450 518 kHz RRT=120 kΩ, EO=0.3 V 10
Maximum Frequency3 fMAXDUTY3 348 410 472 kHz RRT=470 kΩ, EO=0.3 V 10
RT Output Voltage VRT 0.9 1.2 1.8 V RRT=120 kΩ 10
Zero Current Detection Voltage VZCD -15 -10 -5 mV 10
Zero Current Detection Voltage Delay tZCDD 0.65 1.35 2.05 µs RRT=120 kΩ 10
IS Overcurrent Detection Voltage VIS_OCP -0.62 -0.6 -0.58 V 10
Restart Timer tREST 15 30 45 µs IS = GND 10
VS Short Protection Detection Voltage VSHORT 0.2 0.3 0.4 V 10
VS Shortstop Protection Detection Time tVS_SH 50 150 300 µs 10
VS Overvoltage Gain Increase Voltage VOVP 1.025 1.05 1.075 x VAMP 10
VS Overvoltage Protection Detection Voltage 1 VOVP1 1.075 1.09 1.105 x VAMP VS rise 10
VS Overvoltage Protection Detection Voltage 2 VOVP2 1.02 1.04 1.06 x VAMP VS drop 10
VS Overvoltage Protection Detection Voltage Hysteresis VHYS 0.03 0.05 0.07 x VAMP 10
VS Low Voltage Gain Increase Voltage VGUP 0.84 0.9 0.96 x VAMP 10
OVP Detection Voltage 1 VOVP3 2.6 2.7 2.8 V OVP rise 10
OVP Detection Voltage 2 VOVP4 2.5 2.6 2.7 V OVP drop 10
OVP Detect Time tOVP3 20 60 150 µs 10
OUT H Voltage VPOUTH 10.8 12 13.2 V OUT=-20 mA 10
OUT L Voltage VPOUTL 1 V OUT=+20 mA 10
OUT Pull-down Resistance RPDOUT 75 100 125 kΩ 10

CAD (KiCad official)

  • Symbol: BD7692FJ-E2
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: bd7692fj-e2-etched.step / bd7692fj-e2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd7692fj-e2.step / bd7692fj-e2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (25 pp, sha256 2d7e3a592e771b92, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF