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Name	Last commit message	Last updated
docs	bd6586muv-e2: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
viewers	bd6586muv-e2: viewers · Ray	1mo ago
bd6586muv-e2-etched.fit.json	bd6586muv-e2: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
bd6586muv-e2-etched.glb	bd6586muv-e2: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
bd6586muv-e2-etched.step	bd6586muv-e2: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
bd6586muv-e2.glb	Publish 0.1.0 · Ray	1mo ago
bd6586muv-e2.kicad_mod	Publish 0.1.0 · Ray	1mo ago
bd6586muv-e2.kicad_sym	Publish 0.1.0 · Ray	1mo ago
bd6586muv-e2.lbr	Publish 0.1.0 · Ray	1mo ago
bd6586muv-e2.step	Publish 0.1.0 · Ray	1mo ago
package.json	Publish 0.1.0 · Ray	1mo ago
page.json	bd6586muv-e2: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray	1mo ago
README.md	bd6586muv-e2: laser-etched CAD + chip hero (factory 2.0.0 backfill) · Ray	1mo ago

BD6586MUV-E2

ROHM Semicon · LED Drivers · VQFN-24-EP(4x4)

BD6586MUV-E2 from ROHM Semicon, in a VQFN-24-EP(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	VBAT	power_in	Battery/IC power supply input. Recommended operating range 2.7V to 5.5V (absolute max 7V). Bypass with a low-ESR ceramic capacitor near the pin.
2	EN1	input	Power control / enable pin 1. Logic input with VthL <= 0.4V and VthH >= 1.4V (max 5.5V), input current ~8.3µA at 2.5V. Used with EN2 and PWM to select which of LED1-4 current drivers are enabled and can be driven with a PWM signal for power-control PWM dimming.
3	EN2	input	Power control / enable pin 2. Logic input with VthL <= 0.4V and VthH >= 1.4V (max 5.5V). Combines with EN1/PWM to enable LED current drivers and supports power-control PWM dimming (100Hz-1kHz).
4	GND	power_in	Analog ground for the DC/DC converter block. Tied together with pins 7 and 10 internally; connect to the ground plane.
5	PWM	input	PWM dimming input for the current drivers (also acts as an enable). Logic thresholds VthL <= 0.4V, VthH >= 1.4V. Typical PWM frequency 100Hz to 10kHz for current-driver PWM control.
6	ISET	input	LED current programming pin. Connect a resistor (RISET) to GND to set nominal LED current: Inormal = 20mA x (24kΩ/RISET). ISET voltage typically 0.6V; do not add capacitance (may oscillate).
7	GND	power_in	Ground return for the ISET resistor. Route RISET's ground leg directly to this pin to preserve current-set accuracy.
8	LED1	input	Current sink for LED string 1 (channel 1). Regulated to VLED = 0.5V typ. Maximum 25mA per channel; LED terminal over-voltage protection at 11.5V typ. Absolute max 25V. Leave OPEN if unused.
9	LED2	input	Current sink for LED string 2. Same specifications as LED1 (VLED = 0.5V typ, 25mA max, 11.5V LED OVP, 25V abs max).
10	GND	power_in	Ground for the current-driver block. Internally connected to pins 4 and 7.
11	LED3	input	Current sink for LED string 3. Same specifications as LED1 (VLED = 0.5V typ, 25mA max, 11.5V LED OVP, 25V abs max).
12	LED4	input	Current sink for LED string 4. Same specifications as LED1 (VLED = 0.5V typ, 25mA max, 11.5V LED OVP, 25V abs max).
13	TEST	input	Factory test input, pulled down internally with 100kΩ to GND. Leave open or tie to GND in application.
14	TESTO	output	Factory test output. Leave unconnected in application.
15	NC	unconnected	No connect. Leave floating or tie to GND.
16	SW	output	Drain of the integrated 28V N-channel switching MOSFET (boost switch node). Absolute max 30.5V. RDS(on) ~0.24Ω typ at Isw = 100mA. Pins 16, 17, 18 are ganged internally; tie to the inductor/SBD anode node.
17	SW	output	Boost switch node (paralleled with pins 16 and 18) to lower conduction resistance and improve heat dissipation.
18	SW	output	Boost switch node (paralleled with pins 16 and 17).
19	VDET	input	Boost output sense input for external SBD-open detect and output over-voltage protection. SBD-open triggers when VDET < 0.1V; OVP set at 25.5V typ (25.0-26.0V). Absolute max 50.5V.
20	NC	unconnected	No connect. Leave floating or tie to GND.
21	PGND	power_in	Power ground / source return for the integrated switching MOSFET. Route directly to input/output capacitor grounds; separated from analog GND inside the IC.
22	PGND	power_in	Power ground / source return for the integrated switching MOSFET (paralleled with pin 21).
23	NC	unconnected	No connect. Leave floating or tie to GND.
24	TRSW	output	Internal switching-MOSFET gate node. A capacitor to PGND may be connected here to soften the SW slew rate and reduce switching noise at the cost of efficiency.
EP	GND	power_in	Exposed thermal pad on the package underside. Must be connected to GND for both thermal dissipation and electrical grounding.

Key specifications

Parameter	Value
Manufacturer	ROHM Semicon
Package	VQFN-24-EP(4x4)
Category	LED Drivers
Pins	25

Ordering variants

Same part, different packaging or reel option.

BD6586MUV-E2

CAD (KiCad official)

Symbol: BD6586MUV-E2
Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.7x2.7mm
3D model: VQFN-24-EP(4x4) (KiCad packages3D, STEP)
3D model files: bd6586muv-e2-etched.step / bd6586muv-e2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd6586muv-e2.step / bd6586muv-e2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: ROHM Semicon datasheet (None pp, sha256 788a6aa7f1f338c9, retrieved 2026-08-17, tier: lcsc)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF