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Set visibility: public

Ray ·b232c96ea5 ·2mo ago ·parent 68f3e53
1 file changed +8−5
page.json+8−5
@@ -38,7 +38,7 @@         "number": "2",         "name": "EN1",         "type": "input",-        "description": "Power control / enable pin 1. Logic input with VthL <= 0.4V and VthH >= 1.4V (max 5.5V), input current ~8.3\u00b5A at 2.5V. Used with EN2 and PWM to select which of LED1-4 current drivers are enabled and can be driven with a PWM signal for power-control PWM dimming."+        "description": "Power control / enable pin 1. Logic input with VthL <= 0.4V and VthH >= 1.4V (max 5.5V), input current ~8.3µA at 2.5V. Used with EN2 and PWM to select which of LED1-4 current drivers are enabled and can be driven with a PWM signal for power-control PWM dimming."       },       {         "number": "3",@@ -62,7 +62,7 @@         "number": "6",         "name": "ISET",         "type": "input",-        "description": "LED current programming pin. Connect a resistor (RISET) to GND to set nominal LED current: Inormal = 20mA x (24k\u03a9/RISET). ISET voltage typically 0.6V; do not add capacitance (may oscillate)."+        "description": "LED current programming pin. Connect a resistor (RISET) to GND to set nominal LED current: Inormal = 20mA x (24kΩ/RISET). ISET voltage typically 0.6V; do not add capacitance (may oscillate)."       },       {         "number": "7",@@ -104,7 +104,7 @@         "number": "13",         "name": "TEST",         "type": "input",-        "description": "Factory test input, pulled down internally with 100k\u03a9 to GND. Leave open or tie to GND in application."+        "description": "Factory test input, pulled down internally with 100kΩ to GND. Leave open or tie to GND in application."       },       {         "number": "14",@@ -122,7 +122,7 @@         "number": "16",         "name": "SW",         "type": "output",-        "description": "Drain of the integrated 28V N-channel switching MOSFET (boost switch node). Absolute max 30.5V. RDS(on) ~0.24\u03a9 typ at Isw = 100mA. Pins 16, 17, 18 are ganged internally; tie to the inductor/SBD anode node."+        "description": "Drain of the integrated 28V N-channel switching MOSFET (boost switch node). Absolute max 30.5V. RDS(on) ~0.24Ω typ at Isw = 100mA. Pins 16, 17, 18 are ganged internally; tie to the inductor/SBD anode node."       },       {         "number": "17",@@ -246,5 +246,8 @@     "docs/bd6586muv-e2-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ]+  ],+  "visibility": {+    "public": true+  } }\ No newline at end of file