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Ray Publish 0.1.0 7d432f6 1d ago

BD135-16

STMicroelectronics · Bipolar Transistors - BJT · TO-126

BD135-16 from STMicroelectronics, in a TO-126. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; the datasheet lists a maximum base current of 0.5 A and a maximum emitter-base voltage of 5 V.
2 C passive Collector (also connected to the mounting tab); the BD135 is rated for VCEO of 45 V and a collector current of 1.5 A (3 A peak).
3 E passive Emitter of the NPN transistor, which carries the 1.5 A maximum collector current.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-126
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector cut-off current (IE=0) ICBO 0.1 µA VCB = 30 V 4
Collector cut-off current (IE=0) ICBO 10 µA VCB = 30 V, TC = 125 °C 4
Emitter cut-off current (IC=0) IEBO 10 µA VEB = 5 V 4
Collector-emitter sustaining voltage (IB=0), BD135 VCEO(sus) 45 V IC = 30 mA 4
Collector-emitter saturation voltage VCE(sat) 0.5 V IC = 0.5 A, IB = 0.05 A 4
Base-emitter voltage VBE 1 V IC = 0.5 A, VCE = 2 V 4
DC current gain hFE 25 IC = 5 mA, VCE = 2 V 4
DC current gain hFE 40 250 IC = 150 mA, VCE = 2 V 4
DC current gain hFE group 16 (BD135-16) hFE 100 250 IC = 150 mA, VCE = 2 V 4
Collector-emitter voltage (IB = 0) VCEO 45 V 3
Collector-base voltage (IE = 0) VCBO 45 V 3
Emitter-base voltage (IC = 0) VEBO 5 V 3
Collector current IC 1.5 A 3
Collector peak current ICM 3 A 3
Base current IB 0.5 A 3
Total dissipation PTOT 12.5 W Tc ≤ 25 °C 3
Total dissipation PTOT 1.25 W Tamb ≤ 25 °C 3
Storage temperature Tstg -65 150 °C 3
Max. operating junction temperature Tj 150 °C 3
Thermal resistance junction-case Rthj-case 10 °C/W 3
Thermal resistance junction-ambient Rthj-amb 100 °C/W 3

CAD (KiCad official)

  • Symbol: BD135-16
  • Footprint: Package_TO_SOT_THT:TO-126-3_Vertical
  • 3D model: TO-126 (KiCad packages3D, STEP)
  • 3D model files: bd135-16-etched.step / bd135-16-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bd135-16.step / bd135-16.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (9 pp, sha256 9a72cdfa334700b8, retrieved 2026-11-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF