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BD135-16
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STMicroelectronics Bipolar Transistors - BJT, TO-126. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BD135-16
STMicroelectronics · Bipolar Transistors - BJT · TO-126
BD135-16 from STMicroelectronics, in a TO-126. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet lists a maximum base current of 0.5 A and a maximum emitter-base voltage of 5 V. |
| 2 | C | passive | Collector (also connected to the mounting tab); the BD135 is rated for VCEO of 45 V and a collector current of 1.5 A (3 A peak). |
| 3 | E | passive | Emitter of the NPN transistor, which carries the 1.5 A maximum collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-126 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current (IE=0) | ICBO | 0.1 | µA | VCB = 30 V | 4 | ||
| Collector cut-off current (IE=0) | ICBO | 10 | µA | VCB = 30 V, TC = 125 °C | 4 | ||
| Emitter cut-off current (IC=0) | IEBO | 10 | µA | VEB = 5 V | 4 | ||
| Collector-emitter sustaining voltage (IB=0), BD135 | VCEO(sus) | 45 | V | IC = 30 mA | 4 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC = 0.5 A, IB = 0.05 A | 4 | ||
| Base-emitter voltage | VBE | 1 | V | IC = 0.5 A, VCE = 2 V | 4 | ||
| DC current gain | hFE | 25 | IC = 5 mA, VCE = 2 V | 4 | |||
| DC current gain | hFE | 40 | 250 | IC = 150 mA, VCE = 2 V | 4 | ||
| DC current gain hFE group 16 (BD135-16) | hFE | 100 | 250 | IC = 150 mA, VCE = 2 V | 4 | ||
| Collector-emitter voltage (IB = 0) | VCEO | 45 | V | 3 | |||
| Collector-base voltage (IE = 0) | VCBO | 45 | V | 3 | |||
| Emitter-base voltage (IC = 0) | VEBO | 5 | V | 3 | |||
| Collector current | IC | 1.5 | A | 3 | |||
| Collector peak current | ICM | 3 | A | 3 | |||
| Base current | IB | 0.5 | A | 3 | |||
| Total dissipation | PTOT | 12.5 | W | Tc ≤ 25 °C | 3 | ||
| Total dissipation | PTOT | 1.25 | W | Tamb ≤ 25 °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Max. operating junction temperature | Tj | 150 | °C | 3 | |||
| Thermal resistance junction-case | Rthj-case | 10 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 100 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
BD135-16 - Footprint:
Package_TO_SOT_THT:TO-126-3_Vertical - 3D model: TO-126 (KiCad packages3D, STEP)
- 3D model files:
bd135-16-etched.step/bd135-16-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bd135-16.step/bd135-16.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (9 pp, sha256
9a72cdfa334700b8, retrieved 2026-11-07, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BD135-16
**STMicroelectronics** · Bipolar Transistors - BJT · TO-126
BD135-16 from STMicroelectronics, in a TO-126. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet lists a maximum base current of 0.5 A and a maximum emitter-base voltage of 5 V. |
| 2 | C | passive | Collector (also connected to the mounting tab); the BD135 is rated for VCEO of 45 V and a collector current of 1.5 A (3 A peak). |
| 3 | E | passive | Emitter of the NPN transistor, which carries the 1.5 A maximum collector current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-126 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector cut-off current (IE=0) | ICBO | | | 0.1 | µA | VCB = 30 V | 4 |
| Collector cut-off current (IE=0) | ICBO | | | 10 | µA | VCB = 30 V, TC = 125 °C | 4 |
| Emitter cut-off current (IC=0) | IEBO | | | 10 | µA | VEB = 5 V | 4 |
| Collector-emitter sustaining voltage (IB=0), BD135 | VCEO(sus) | 45 | | | V | IC = 30 mA | 4 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC = 0.5 A, IB = 0.05 A | 4 |
| Base-emitter voltage | VBE | | | 1 | V | IC = 0.5 A, VCE = 2 V | 4 |
| DC current gain | hFE | 25 | | | | IC = 5 mA, VCE = 2 V | 4 |
| DC current gain | hFE | 40 | | 250 | | IC = 150 mA, VCE = 2 V | 4 |
| DC current gain hFE group 16 (BD135-16) | hFE | 100 | | 250 | | IC = 150 mA, VCE = 2 V | 4 |
| Collector-emitter voltage (IB = 0) | VCEO | | | 45 | V | | 3 |
| Collector-base voltage (IE = 0) | VCBO | | | 45 | V | | 3 |
| Emitter-base voltage (IC = 0) | VEBO | | | 5 | V | | 3 |
| Collector current | IC | | | 1.5 | A | | 3 |
| Collector peak current | ICM | | | 3 | A | | 3 |
| Base current | IB | | | 0.5 | A | | 3 |
| Total dissipation | PTOT | | | 12.5 | W | Tc ≤ 25 °C | 3 |
| Total dissipation | PTOT | | | 1.25 | W | Tamb ≤ 25 °C | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Max. operating junction temperature | Tj | | | 150 | °C | | 3 |
| Thermal resistance junction-case | Rthj-case | | | 10 | °C/W | | 3 |
| Thermal resistance junction-ambient | Rthj-amb | | | 100 | °C/W | | 3 |
## CAD (KiCad official)
- Symbol: `BD135-16`
- Footprint: `Package_TO_SOT_THT:TO-126-3_Vertical`
- 3D model: TO-126 (KiCad packages3D, STEP)
- 3D model files: `bd135-16-etched.step` / `bd135-16-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bd135-16.step` / `bd135-16.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/bd135-16.pdf) (9 pp, sha256 `9a72cdfa334700b8`, retrieved 2026-11-07, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bd135-16-datasheet.pdf)