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BCZ65N45M1

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Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCZ65N45M1

Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

BCZ65N45M1 from Bestirpower, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain of the SiC MOSFET, rated for VDSS of 650 V with continuous drain current of 44 A at TC = 25℃ (31 A at 100℃).
2 Power Source passive Power source terminal carrying the main drain current (ID 44 A at TC = 25℃, pulsed IDM 117 A).
3 Driver Source passive Driver (Kelvin) source return for the gate drive, separate from the power source, with gate-source voltage limits of -10/+22 V and recommended operation of -5/+18 V.
4 Gate input Gate input of the MOSFET with absolute maximum VGS of -10/+22 V (DC), recommended drive -5/+18 V and threshold voltage of 1.8 to 4.5 V at ID = 7 mA.

Key specifications

Parameter Value
Manufacturer Bestirpower
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 650 V 1
Gate to Source Voltage (DC) VGS -10 22 V 1
Recommended Operation Value VGSop -5 18 V 1
Drain Current ID 44 A VGS = 18 V, TC = 25℃ 1
Drain Current ID 31 A VGS = 18 V, TC = 100℃ 1
Drain Current Pulsed IDM 117 A Limited by maximum junction temperature 1
Power Dissipation PD 150 W TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 1 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 40 ℃/W 1
Soldering temperature, wave soldering only allowed at leads Tsold 260 ℃ 1
Drain to Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 1 mA 2
Zero Gate Voltage Drain Current IDSS 1 100 μA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 650 V, VGS = 0 V, TJ = 175℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS = +22 V, VDS = 0 V 2
Gate-Source Leakage Current IGSS -100 nA VGS = -10 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 1.8 2.8 4.5 V VGS = VDS, ID = 7 mA 2
Static Drain to Source On Resistance RDS(on) 45 63 mΩ VGS = 18 V, ID = 20 A 2
Static Drain to Source On Resistance RDS(on) 59 mΩ VGS = 18 V, ID = 20 A, TJ = 175℃ 2
Transconductance gfs 13.4 S VDS = 20 V, ID = 20 A 2
Input Capacitance Ciss 1048 pF VDS = 400 V, VGS = 0V, f = 1 MHz 2
Output Capacitance Coss 131 pF VDS = 400 V, VGS = 0V, f = 1 MHz 2
Reverse Capacitance Crss 9.1 pF VDS = 400 V, VGS = 0V, f = 1 MHz 2
Stored Energy in Output Capacitance Eoss 13 μJ VDS = 0 V to 400 V, VGS = 0 V 2
Energy Related Output Capacitance Co(er) 162 pF 2
Time Related Output Capacitance Co(tr) 236 pF 2
Total Gate Charge Qg(tot) 56 nC VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load 2
Gate to Source Charge Qgs 14 nC VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load 2
Gate to Drain Miller Charge Qgd 15 nC VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load 2
Internal Gate Resistance RG 4 Ω f = 1MHz, VAC=30mV 2
Turn-On Delay Time td(on) 13 ns VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Turn-On Rise Time tr 10 ns VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Turn-Off Delay Time td(off) 26 ns VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Turn-Off Fall Time tf 5 ns VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Turn-on Switching Energy Eon 27 μJ VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Turn-off Switching Energy Eoff 18 μJ VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Total Switching Energy Etot 45 μJ VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 Ω, FWD: BCH65S012D1, Inductive load 2
Maximum Continuous Diode Forward Current IS 42 A 2
Maximum Pulsed Diode Forward Current ISM 117 A 2
Diode Forward Voltage VSD 4.2 V VGS = -5 V, ISD = 20 A 2
Reverse Recovery Time trr 17 ns VDD = 400 V, ISD = 20 A, dIF/dt = 1000 A/μs, Includes QOSS 2
Reverse Recovery Charge Qrr 104 nC VDD = 400 V, ISD = 20 A, dIF/dt = 1000 A/μs, Includes QOSS 2
Peak Reverse Recovery Current Irrm 10 A VDD = 400 V, ISD = 20 A, dIF/dt = 1000 A/μs, Includes QOSS 2

CAD (KiCad official)

  • Symbol: BCZ65N45M1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: bcz65n45m1-etched.step / bcz65n45m1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcz65n45m1.step / bcz65n45m1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bestirpower datasheet (9 pp, sha256 0125dfebe7229975, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF