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BCZ120N40M1

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by adom

Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCZ120N40M1

Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

BCZ120N40M1 from Bestirpower, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain passive Drain terminal of the MOSFET, rated for 1200 V drain-to-source (VDSS) and 60 A continuous drain current at TC = 25℃ (VGS = 18 V).
2 Power Source passive Main power source terminal carrying the drain current; the datasheet gives no separate electrical limit for this pin beyond the 1200 V VDSS and 60 A ratings of the device.
3 Driver Source passive Gate-driver return source terminal, kept separate from the Power Source pin in the datasheet block diagram; the datasheet gives no separate electrical limit for this pin.
4 Gate input Gate input with absolute maximum DC VGS of -10 V / +22 V and recommended operating range of -5 V / +18 V.

Key specifications

Parameter Value
Manufacturer Bestirpower
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage (DC) VGS -10 22 V 1
Recommended Operation Value VGSop -5 18 V 1
Drain to Source Voltage VDSS 1200 V 1
Continuous Drain Current ID 60 A VGS=18V, TC=25℃ 1
Continuous Drain Current ID 42 A VGS=18V, TC=100℃ 1
Drain Current Pulsed IDM 160 A Note 1: limited by maximum junction temperature 1
Avalanche Capability EAS 1000 mJ VDD=100V, VGS=20V, L=2mH 1
Avalanche Capability IAV 30 A VDD=100V, VGS=20V, L=2mH 1
Power Dissipation PD 375 W TC=25℃ 1
Derate Above 25℃ PD 2.5 W/℃ Derate above 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Soldering temperature Tsold 260 ℃ Wave soldering only allowed at leads 1
Thermal Resistance, Junction to Case RθJC 0.4 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 34 ℃/W 1
Drain to Source Breakdown Voltage BVDSS 1200 V VGS = 0 V, ID = 1 mA 1
Zero Gate Voltage Drain Current IDSS 1 100 μA VDS = 1200 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS 5 μA VDS = 1200 V, VGS = 0 V, TJ = 175℃ 1
Gate-Source Leakage Current IGSS 100 nA VGS = +22 V, VDS = 0 V 1
Gate-Source Leakage Current IGSS -100 nA VGS = -10 V, VDS = 0 V 1
Gate Threshold Voltage VGS(th) 2 3 4.5 V VGS = VDS, ID = 10 mA 2
Static Drain to Source On Resistance RDS(on) 40 56 mΩ VGS = 18 V, ID = 30 A 2
Static Drain to Source On Resistance RDS(on) 51 mΩ VGS = 18 V, ID = 30 A, TJ = 175℃ 2
Static Drain to Source On Resistance RDS(on) 50 mΩ VGS = 15 V, ID = 30 A 2
Static Drain to Source On Resistance RDS(on) 53 mΩ VGS = 15 V, ID = 30 A, TJ = 150℃ 2
Static Drain to Source On Resistance RDS(on) 59 mΩ VGS = 15 V, ID = 30 A, TJ = 175℃ 2
Static Drain to Source On Resistance RDS(on) 40 mΩ VGS = 18 V, ID = 40 A 2
Static Drain to Source On Resistance RDS(on) 54 mΩ VGS = 18 V, ID = 40 A, TJ = 150℃ 2
Static Drain to Source On Resistance RDS(on) 58 mΩ VGS = 18 V, ID = 40 A, TJ = 175℃ 2
Transconductance gfs 15 S VDS = 20 V, ID = 30 A 2
Input Capacitance Ciss 1960 pF VDS = 800 V, VGS = 0V, f = 250 kHz 2
Output Capacitance Coss 125 pF 2
Reverse Capacitance Crss 5 pF 2
Stored Energy in Output Capacitance Eoss 50 μJ VDS = 0 V to 800 V, VGS = 0 V 2
Energy Related Output Capacitance Co(er) 146 pF 2
Time Related Output Capacitance Co(tr) 258 pF 2
Total Gate Charge Qg(tot) 109 nC VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V 2
Gate to Source Charge Qgs 28 nC 2
Gate to Drain Miller Charge Qgd 35 nC 2
Internal Gate Resistance RG 3.5 Ω f = 1MHz, VAC=30mV 2
Turn-On Delay Time td(on) 18 ns VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, RG = 2.5Ω, FWD: BCH120S020D1, Inductive load 2
Turn-On Rise Time tr 13 ns 2
Turn-Off Delay Time td(off) 35 ns 2
Turn-Off Fall Time tf 8 ns 2
Turn-on Switching Energy Eon 232 μJ 2
Turn-off Switching Energy Eoff 73 μJ 2
Total Switching Energy Etot 305 μJ 2
Maximum Continuous Diode Forward Current IS 60 A 2
Maximum Pulsed Diode Forward Current ISM 160 A 2
Diode Forward Voltage VSD 4.2 V VGS = -5 V, ISD = 30 A 2
Reverse Recovery Time trr 22 ns VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/μs 2
Reverse Recovery Charge Qrr 348 nC VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/μs 2
Reverse Recovery Time trr 13 ns VGS=-5V, VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A/μs 2
Reverse Recovery Charge Qrr 182 nC VGS=-5V, VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A/μs 2
Peak Reverse Recovery Current Irrm 23 A 2

CAD (KiCad official)

  • Symbol: BCZ120N40M1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: bcz120n40m1-etched.step / bcz120n40m1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcz120n40m1.step / bcz120n40m1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bestirpower datasheet (10 pp, sha256 ff9ed1ca7308777f, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF