component

BCZ120N32W1

Public Made by Adom

by adom

Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs bcz120n32w1: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers bcz120n32w1: viewers · Ray 1mo ago
bcz120n32w1-etched.fit.json bcz120n32w1: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bcz120n32w1-etched.glb bcz120n32w1: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bcz120n32w1-etched.step bcz120n32w1: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bcz120n32w1.glb Publish 0.1.0 · Ray 1mo ago
bcz120n32w1.kicad_mod Publish 0.1.0 · Ray 1mo ago
bcz120n32w1.kicad_sym Publish 0.1.0 · Ray 1mo ago
bcz120n32w1.lbr Publish 0.1.0 · Ray 1mo ago
bcz120n32w1.step Publish 0.1.0 · Ray 1mo ago
package.json bcz120n32w1: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json bcz120n32w1: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
README.md Initial commit: component/bcz120n32w1 · Ray 1mo ago

BCZ120N32W1

Bestirpower · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4

BCZ120N32W1 from Bestirpower, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Drain output Drain terminal with maximum drain-source blocking voltage BVDSS of 1200 V and maximum continuous drain current ID of 69 A at VGS = 18 V and TC = 25°C.
2 Power Source power_in Source return connection for device current and heat dissipation.
3 Source power_in Source terminal, the reference point for gate-source voltage VGS and drain-source voltage VDSS measurements.
4 Gate input Gate control terminal with absolute maximum gate-source voltage VGS of -10 V to +25 V and recommended operation range VGSop of -4 V to +20 V; total gate charge Qg(tot) is 121 nC typ.

Key specifications

Parameter Value
Manufacturer Bestirpower
Package TO-247-4
Category Silicon Carbide (SiC) Devices
Pins 4

CAD (KiCad official)

  • Symbol: BCZ120N32W1
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4 (KiCad packages3D, STEP)
  • 3D model files: bcz120n32w1-etched.step / bcz120n32w1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcz120n32w1.step / bcz120n32w1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Bestirpower datasheet (8 pp, sha256 4e4df96f1692c2e7, retrieved 2026-09-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF