component
BCZ120N32W1
Public Made by Adomby adom
Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
README.mdadded+40@@ -0,0 +1,40 @@+# BCZ120N32W1++**Bestirpower** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4++BCZ120N32W1 from Bestirpower, in a TO-247-4. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | Drain | output | Drain terminal with maximum drain-source blocking voltage BVDSS of 1200 V and maximum continuous drain current ID of 69 A at VGS = 18 V and TC = 25°C. |+| 2 | Power Source | power_in | Source return connection for device current and heat dissipation. |+| 3 | Source | power_in | Source terminal, the reference point for gate-source voltage VGS and drain-source voltage VDSS measurements. |+| 4 | Gate | input | Gate control terminal with absolute maximum gate-source voltage VGS of -10 V to +25 V and recommended operation range VGSop of -4 V to +20 V; total gate charge Qg(tot) is 121 nC typ. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Bestirpower |+| Package | TO-247-4 |+| Category | Silicon Carbide (SiC) Devices |+| Pins | 4 |++## CAD (KiCad official)++- Symbol: `BCZ120N32W1`+- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`+- 3D model: TO-247-4 (KiCad packages3D, STEP)+- 3D model files: `bcz120n32w1-etched.step` / `bcz120n32w1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcz120n32w1.step` / `bcz120n32w1.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Bestirpower datasheet](docs/bcz120n32w1-datasheet.pdf) (8 pp, sha256 `4e4df96f1692c2e7`, retrieved 2026-09-22, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bcz120n32w1-datasheet.pdf)
page.jsonadded+119@@ -0,0 +1,119 @@+{+ "slug": "bcz120n32w1",+ "version": "0.1.0",+ "type": "component",+ "description": "Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "silicon carbide (sic) devices",+ "bcz120n32w1",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "bcz120n32w1.kicad_sym",+ "bcz120n32w1.kicad_mod",+ "bcz120n32w1.glb",+ "bcz120n32w1.step",+ "bcz120n32w1.lbr",+ "docs/hero.png",+ "docs/bcz120n32w1-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html"+ ],+ "component": {+ "mpn": "BCZ120N32W1",+ "manufacturer": "Bestirpower",+ "package": "TO-247-4",+ "pin_count": 4,+ "category": "Silicon Carbide (SiC) Devices",+ "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",+ "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/5cfbefe5b7b48350e65009d702f1202a.pdf",+ "parts": {+ "symbol": "bcz120n32w1.kicad_sym",+ "footprint": "bcz120n32w1.kicad_mod",+ "model_3d": "bcz120n32w1-etched.glb",+ "model_3d_plain": "bcz120n32w1.glb",+ "model_3d_step": "bcz120n32w1-etched.step",+ "model_3d_step_plain": "bcz120n32w1.step",+ "lbr": "bcz120n32w1.lbr"+ },+ "distributor_links": {+ "lcsc": "C46472754"+ },+ "pins": [+ {+ "number": "1",+ "name": "Drain",+ "type": "output",+ "description": "Drain terminal with maximum drain-source blocking voltage BVDSS of 1200 V and maximum continuous drain current ID of 69 A at VGS = 18 V and TC = 25°C."+ },+ {+ "number": "2",+ "name": "Power Source",+ "type": "power_in",+ "description": "Source return connection for device current and heat dissipation."+ },+ {+ "number": "3",+ "name": "Source",+ "type": "power_in",+ "description": "Source terminal, the reference point for gate-source voltage VGS and drain-source voltage VDSS measurements."+ },+ {+ "number": "4",+ "name": "Gate",+ "type": "input",+ "description": "Gate control terminal with absolute maximum gate-source voltage VGS of -10 V to +25 V and recommended operation range VGSop of -4 V to +20 V; total gate charge Qg(tot) is 121 nC typ."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.2",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.2",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-4-6",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: Pin 2 labeled 'Power Source' and Pin 3 labeled 'Source' are both source connections in the TO-247-4 "+ ],+ "pages_sent": 8,+ "cost_usd": 0.1119,+ "at": "2026-09-22T04:36:50"+ },+ "datasheet": {+ "url": "https://datasheet.lcsc.com/datasheet/pdf/5cfbefe5b7b48350e65009d702f1202a.pdf",+ "pages": 8,+ "sha256": "4e4df96f1692c2e7",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 4,+ "described": 4,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}