component
BCZ120N160W1
Public Made by Adomby adom
Bestirpower Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# BCZ120N160W1++**Bestirpower** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L++BCZ120N160W1 from Bestirpower, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | Drain | passive | Drain terminal; absolute maximum voltage VDS(max) = 1200 V at VGS = 0 V; continuous drain current 22 A at TC = 25°C. |+| 2 | Source | power_in | Power source terminal providing return path for drain current. |+| 3 | Source | power_in | Source terminal; parallel connection with pin 2 for current distribution. |+| 4 | Gate | input | Gate control terminal; recommended operational voltage range -5 V to +18 V. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | Bestirpower |+| Package | TO-247-4L |+| Category | Silicon Carbide (SiC) Devices |+| Pins | 4 |++## CAD (KiCad official)++- Symbol: `BCZ120N160W1`+- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`+- 3D model: TO-247-4L (KiCad packages3D, STEP)++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [Bestirpower datasheet](docs/bcz120n160w1-datasheet.pdf) (8 pp, sha256 `7306698998d12d21`, retrieved 2026-09-17, tier: lcsc)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/bcz120n160w1-datasheet.pdf)
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