component
BCX56 BH HD
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Guangdong Hottech Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCX56 BH HD
Guangdong Hottech · Bipolar Transistors - BJT · SOT-89
BCX56 BH HD from Guangdong Hottech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; maximum base current IB 0.1 A, peak 0.2 A, VEBO 5 V. |
| 2 | C | passive | Collector of the NPN transistor, also connected to the metal tab; VCBO 100 V, VCEO 80 V, IC 1 A. |
| 3 | E | passive | Emitter of the NPN transistor; emitter-base voltage limit VEBO 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 100 | V | TA = 25°C | 1 | ||
| Collector-Emitter Voltage | VCEO | 80 | V | TA = 25°C | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = 25°C | 1 | ||
| Collector Current | IC | 1 | A | TA = 25°C | 1 | ||
| Base Current | IB | 0.1 | A | TA = 25°C | 1 | ||
| Peak Base Current | IBM | 0.2 | A | TA = 25°C | 1 | ||
| Collector Power Dissipation | PC | 500 | mW | TA = 25°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance From Junction To Ambient | RθJA | 250 | °C/W | 1 | |||
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | IC=100uA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC=10mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10uA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | uA | VCB=60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 | 1 | ||
| DC current gain | hFE1 | 40 | VCE=2V, IC=5mA | 1 | |||
| DC current gain (rank H) | hFE2 | 63 | 250 | VCE=2V, IC=150mA | 1 | ||
| DC current gain | hFE3 | 25 | VCE=2V, IC=0.5A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=0.5A, IB=50mA | 1 | ||
| Base-emitter voltage | VBE | 1 | V | VCE=2V, IC=0.5A | 1 | ||
| Transition frequency | fT | 130 | MHz | VCE=5V, IC=10mA, f=100MHz | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Peak Base Current IBM 0.2 A Collector Power Dissipation PC 500 mW | 1 |
CAD (KiCad official)
- Symbol:
BCX56 BH HD - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
bcx56-bh-hd-etched.step/bcx56-bh-hd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx56-bh-hd.step/bcx56-bh-hd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Guangdong Hottech datasheet (4 pp, sha256
b956838784a75761, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCX56 BH HD
**Guangdong Hottech** · Bipolar Transistors - BJT · SOT-89
BCX56 BH HD from Guangdong Hottech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; maximum base current IB 0.1 A, peak 0.2 A, VEBO 5 V. |
| 2 | C | passive | Collector of the NPN transistor, also connected to the metal tab; VCBO 100 V, VCEO 80 V, IC 1 A. |
| 3 | E | passive | Emitter of the NPN transistor; emitter-base voltage limit VEBO 5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Guangdong Hottech |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 100 | V | TA = 25°C | 1 |
| Collector-Emitter Voltage | VCEO | | | 80 | V | TA = 25°C | 1 |
| Emitter-Base Voltage | VEBO | | | 5 | V | TA = 25°C | 1 |
| Collector Current | IC | | | 1 | A | TA = 25°C | 1 |
| Base Current | IB | | | 0.1 | A | TA = 25°C | 1 |
| Peak Base Current | IBM | | | 0.2 | A | TA = 25°C | 1 |
| Collector Power Dissipation | PC | | | 500 | mW | TA = 25°C | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance From Junction To Ambient | RθJA | | 250 | | °C/W | | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 100 | | | V | IC=100uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | | | V | IC=10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE=10uA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | 0.1 | uA | VCB=60V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 0.1 | uA | VEB=5V, IC=0 | 1 |
| DC current gain | hFE1 | 40 | | | | VCE=2V, IC=5mA | 1 |
| DC current gain (rank H) | hFE2 | 63 | | 250 | | VCE=2V, IC=150mA | 1 |
| DC current gain | hFE3 | 25 | | | | VCE=2V, IC=0.5A | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC=0.5A, IB=50mA | 1 |
| Base-emitter voltage | VBE | | | 1 | V | VCE=2V, IC=0.5A | 1 |
| Transition frequency | fT | | 130 | | MHz | VCE=5V, IC=10mA, f=100MHz | 1 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | | Peak Base Current IBM 0.2 A Collector Power Dissipation PC 500 mW | 1 |
## CAD (KiCad official)
- Symbol: `BCX56 BH HD`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `bcx56-bh-hd-etched.step` / `bcx56-bh-hd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx56-bh-hd.step` / `bcx56-bh-hd.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Guangdong Hottech datasheet](docs/bcx56-bh-hd-datasheet.pdf) (4 pp, sha256 `b956838784a75761`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcx56-bh-hd-datasheet.pdf)