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BCX56-16TX
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Nexperia Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCX56-16TX
Nexperia · Bipolar Transistors - BJT · SOT-89
BCX56-16TX from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; the datasheet limits the emitter-base voltage VEBO to 5 V with the collector open. |
| 2 | C | passive | Collector terminal of the NPN transistor; limits are VCBO 100 V, VCEO 80 V, IC 1 A and ICM 2 A for single pulses with tp ≤ 1 ms. |
| 3 | B | passive | Base terminal of the NPN transistor; the datasheet limits base current IB to 200 mA and peak base current IBM to 300 mA for single pulses with tp ≤ 1 ms. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | 100 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | 80 | V | open base | 3 | ||
| emitter-base voltage | VEBO | 5 | V | open collector | 3 | ||
| collector current | IC | 1 | A | 3 | |||
| peak collector current | ICM | 2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| base current | IB | 200 | mA | 3 | |||
| peak base current | IBM | 300 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation | Ptot | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| total power dissipation | Ptot | 800 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 3 | ||
| total power dissipation | Ptot | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 250 | K/W | FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 157 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 4 | ||
| thermal resistance from junction to ambient in free air | Rth(j-a) | 114 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 4 | ||
| collector-base breakdown voltage | V(BR)CBO | 100 | V | IC = 100 µA; IE = 0 A | 5 | ||
| collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC = 2 mA; IE = 0 A | 5 | ||
| emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A | 5 | ||
| collector-base cut-off current | ICBO | 100 | nA | VCB = 30 V; IE = 0 A | 5 | ||
| collector-base cut-off current | ICBO | 10 | μA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 5 | ||
| emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A | 5 | ||
| DC current gain | hFE | 63 | BCX56T, -10T, -16T; VCE = 2 V; IC = 5 mA | 5 | |||
| DC current gain | hFE | 40 | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | |||
| DC current gain | hFE | 100 | 250 | BCX56-16T; VCE = 2 V; IC = 150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| collector-emitter saturation voltage | VCEsat | 500 | mV | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| base-emitter voltage | VBE | 1 | V | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
CAD (KiCad official)
- Symbol:
BCX56-16TX - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
bcx56-16tx-etched.step/bcx56-16tx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx56-16tx.step/bcx56-16tx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
84b4b88c2fc85dd4, retrieved 2026-10-28, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCX56-16TX
**Nexperia** · Bipolar Transistors - BJT · SOT-89
BCX56-16TX from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; the datasheet limits the emitter-base voltage VEBO to 5 V with the collector open. |
| 2 | C | passive | Collector terminal of the NPN transistor; limits are VCBO 100 V, VCEO 80 V, IC 1 A and ICM 2 A for single pulses with tp ≤ 1 ms. |
| 3 | B | passive | Base terminal of the NPN transistor; the datasheet limits base current IB to 200 mA and peak base current IBM to 300 mA for single pulses with tp ≤ 1 ms. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | | | 100 | V | open emitter | 3 |
| collector-emitter voltage | VCEO | | | 80 | V | open base | 3 |
| emitter-base voltage | VEBO | | | 5 | V | open collector | 3 |
| collector current | IC | | | 1 | A | | 3 |
| peak collector current | ICM | | | 2 | A | single pulse; tp ≤ 1 ms | 3 |
| base current | IB | | | 200 | mA | | 3 |
| peak base current | IBM | | | 300 | mA | single pulse; tp ≤ 1 ms | 3 |
| total power dissipation | Ptot | | | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 |
| total power dissipation | Ptot | | | 800 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 3 |
| total power dissipation | Ptot | | | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 3 |
| junction temperature | Tj | | | 150 | °C | | 3 |
| ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| thermal resistance from junction to ambient in free air | Rth(j-a) | | | 250 | K/W | FR4 PCB, single-sided copper, tin-plated, standard footprint | 4 |
| thermal resistance from junction to ambient in free air | Rth(j-a) | | | 157 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2 | 4 |
| thermal resistance from junction to ambient in free air | Rth(j-a) | | | 114 | K/W | FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 | 4 |
| collector-base breakdown voltage | V(BR)CBO | 100 | | | V | IC = 100 µA; IE = 0 A | 5 |
| collector-emitter breakdown voltage | V(BR)CEO | 80 | | | V | IC = 2 mA; IE = 0 A | 5 |
| emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE = 100 µA; IC = 0 A | 5 |
| collector-base cut-off current | ICBO | | | 100 | nA | VCB = 30 V; IE = 0 A | 5 |
| collector-base cut-off current | ICBO | | | 10 | μA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 5 |
| emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A | 5 |
| DC current gain | hFE | 63 | | | | BCX56T, -10T, -16T; VCE = 2 V; IC = 5 mA | 5 |
| DC current gain | hFE | 40 | | | | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| DC current gain | hFE | 100 | | 250 | | BCX56-16T; VCE = 2 V; IC = 150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| collector-emitter saturation voltage | VCEsat | | | 500 | mV | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| base-emitter voltage | VBE | | | 1 | V | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
## CAD (KiCad official)
- Symbol: `BCX56-16TX`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `bcx56-16tx-etched.step` / `bcx56-16tx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx56-16tx.step` / `bcx56-16tx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BCX56-16TX.pdf) (12 pp, sha256 `84b4b88c2fc85dd4`, retrieved 2026-10-28, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcx56-16tx-datasheet.pdf)