component
BCX56-10TX
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCX56-10TX
Nexperia · Bipolar Transistors - BJT · SOT-89-3
BCX56-10TX from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; the datasheet gives no pin-specific voltage or current limit for this pin, and the absolute maximum ratings apply at device level (for example VEBO 5 V and IC 1 A). |
| 2 | C | passive | Collector terminal of the NPN transistor; the datasheet gives no pin-specific limit for this pin, and the device-level ratings apply (for example VCEO 80 V, IC 1 A, ICM 2 A). |
| 3 | B | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit for this pin, and the device-level ratings apply (for example IB 200 mA and IBM 300 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | IC = 100 µA; IE = 0 A | 5 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC = 2 mA; IE = 0 A | 5 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A | 5 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 30 V; IE = 0 A | 5 | ||
| Collector-base cut-off current at high temperature | ICBO | 10 | μA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 5 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A | 5 | ||
| DC current gain (BCX56-10T) | hFE | 63 | 160 | VCE = 2 V; IC = 150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| DC current gain | hFE | 63 | VCE = 2 V; IC = 5 mA | 5 | |||
| DC current gain | hFE | 40 | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | |||
| Collector-emitter saturation voltage | VCEsat | 500 | mV | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Base-emitter voltage | VBE | 1 | V | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Collector-base voltage | VCBO | 100 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | 80 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | 5 | V | open collector | 3 | ||
| Collector current | IC | 1 | A | 3 | |||
| Peak collector current | ICM | 2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| Base current | IB | 200 | mA | 3 | |||
| Peak base current | IBM | 300 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation | Ptot | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 | ||
| Total power dissipation | Ptot | 800 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad | 3 | ||
| Total power dissipation | Ptot | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, 6 cm2 collector mounting pad | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 250 | K/W | FR4 PCB, single-sided copper, tin-plated, standard footprint; in free air | 4 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 157 | K/W | FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad; in free air | 4 | ||
| Thermal resistance from junction to ambient | Rth(j-a) | 114 | K/W | FR4 PCB, single-sided copper, tin-plated, 6 cm2 collector mounting pad; in free air | 4 |
CAD (KiCad official)
- Symbol:
BCX56-10TX - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files:
bcx56-10tx-etched.step/bcx56-10tx-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx56-10tx.step/bcx56-10tx.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
84b4b88c2fc85dd4, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCX56-10TX
**Nexperia** · Bipolar Transistors - BJT · SOT-89-3
BCX56-10TX from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; the datasheet gives no pin-specific voltage or current limit for this pin, and the absolute maximum ratings apply at device level (for example VEBO 5 V and IC 1 A). |
| 2 | C | passive | Collector terminal of the NPN transistor; the datasheet gives no pin-specific limit for this pin, and the device-level ratings apply (for example VCEO 80 V, IC 1 A, ICM 2 A). |
| 3 | B | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit for this pin, and the device-level ratings apply (for example IB 200 mA and IBM 300 mA). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 100 | | | V | IC = 100 µA; IE = 0 A | 5 |
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | | | V | IC = 2 mA; IE = 0 A | 5 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE = 100 µA; IC = 0 A | 5 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB = 30 V; IE = 0 A | 5 |
| Collector-base cut-off current at high temperature | ICBO | | | 10 | μA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 5 |
| Emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A | 5 |
| DC current gain (BCX56-10T) | hFE | 63 | | 160 | | VCE = 2 V; IC = 150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| DC current gain | hFE | 63 | | | | VCE = 2 V; IC = 5 mA | 5 |
| DC current gain | hFE | 40 | | | | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| Collector-emitter saturation voltage | VCEsat | | | 500 | mV | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| Base-emitter voltage | VBE | | | 1 | V | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| Collector-base voltage | VCBO | | | 100 | V | open emitter | 3 |
| Collector-emitter voltage | VCEO | | | 80 | V | open base | 3 |
| Emitter-base voltage | VEBO | | | 5 | V | open collector | 3 |
| Collector current | IC | | | 1 | A | | 3 |
| Peak collector current | ICM | | | 2 | A | single pulse; tp ≤ 1 ms | 3 |
| Base current | IB | | | 200 | mA | | 3 |
| Peak base current | IBM | | | 300 | mA | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation | Ptot | | | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, standard footprint | 3 |
| Total power dissipation | Ptot | | | 800 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad | 3 |
| Total power dissipation | Ptot | | | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, tin-plated, 6 cm2 collector mounting pad | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 250 | K/W | FR4 PCB, single-sided copper, tin-plated, standard footprint; in free air | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 157 | K/W | FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad; in free air | 4 |
| Thermal resistance from junction to ambient | Rth(j-a) | | | 114 | K/W | FR4 PCB, single-sided copper, tin-plated, 6 cm2 collector mounting pad; in free air | 4 |
## CAD (KiCad official)
- Symbol: `BCX56-10TX`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files: `bcx56-10tx-etched.step` / `bcx56-10tx-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx56-10tx.step` / `bcx56-10tx.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BCX56-10TX.pdf) (12 pp, sha256 `84b4b88c2fc85dd4`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcx56-10tx-datasheet.pdf)