component
BCX56-10TF
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BCX56-10TF
Nexperia · Bipolar Transistors - BJT · SOT-89
BCX56-10TF from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the NPN transistor; VEBO max 5 V (open collector). |
| 2 | C | passive | Collector of the NPN transistor; VCEO max 80 V, VCBO max 100 V, IC max 1 A (ICM 2 A single pulse tp ≤ 1 ms). |
| 3 | B | passive | Base of the NPN transistor; IB max 200 mA (IBM 300 mA single pulse tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 100 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | 80 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | 5 | V | open collector | 3 | ||
| Collector current | IC | 1 | A | 3 | |||
| Peak collector current | ICM | 2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| Base current | IB | 200 | mA | 3 | |||
| Peak base current | IBM | 300 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation (standard footprint) | Ptot | 500 | mW | Tamb ≤ 25 °C; FR4 PCB; standard footprint | 3 | ||
| Total power dissipation (collector pad 1 cm2) | Ptot | 800 | mW | Tamb ≤ 25 °C; FR4 PCB; mounting pad for collector 1 cm2 | 3 | ||
| Total power dissipation (collector pad 6 cm2) | Ptot | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB; mounting pad for collector 6 cm2 | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 250 | K/W | in free air; FR4 PCB; standard footprint | 4 | ||
| Thermal resistance junction to ambient (collector pad 1 cm2) | Rth(j-a) | 157 | K/W | in free air; FR4 PCB; mounting pad for collector 1 cm2 | 4 | ||
| Thermal resistance junction to ambient (collector pad 6 cm2) | Rth(j-a) | 114 | K/W | in free air; FR4 PCB; mounting pad for collector 6 cm2 | 4 | ||
| Collector-base breakdown voltage | V(BR)CBO | 100 | V | IC = 100 µA; IE = 0 A | 5 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | V | IC = 2 mA; IE = 0 A | 5 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100 µA; IC = 0 A | 5 | ||
| Collector-base cut-off current | ICBO | 100 | nA | VCB = 30 V; IE = 0 A | 5 | ||
| Collector-base cut-off current | ICBO | 10 | μA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 5 | ||
| Emitter-base cut-off current | IEBO | 100 | nA | VEB = 5 V; IC = 0 A | 5 | ||
| DC current gain | hFE | 63 | VCE = 2 V; IC = 5 mA | 5 | |||
| DC current gain | hFE | 40 | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | |||
| DC current gain BCX56-10T | hFE | 63 | 160 | VCE = 2 V; IC = 150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Collector-emitter saturation voltage | VCEsat | 500 | mV | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Base-emitter voltage | VBE | 1 | V | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Transition frequency | fT | 155 | MHz | VCE = 5 V; IC = 50 mA; f = 100 MHz | 5 | ||
| Collector capacitance | Cc | 4.5 | pF | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | 5 |
CAD (KiCad official)
- Symbol:
BCX56-10TF - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
bcx56-10tf-etched.step/bcx56-10tf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx56-10tf.step/bcx56-10tf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
84b4b88c2fc85dd4, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCX56-10TF
**Nexperia** · Bipolar Transistors - BJT · SOT-89
BCX56-10TF from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the NPN transistor; VEBO max 5 V (open collector). |
| 2 | C | passive | Collector of the NPN transistor; VCEO max 80 V, VCBO max 100 V, IC max 1 A (ICM 2 A single pulse tp ≤ 1 ms). |
| 3 | B | passive | Base of the NPN transistor; IB max 200 mA (IBM 300 mA single pulse tp ≤ 1 ms). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 100 | V | open emitter | 3 |
| Collector-emitter voltage | VCEO | | | 80 | V | open base | 3 |
| Emitter-base voltage | VEBO | | | 5 | V | open collector | 3 |
| Collector current | IC | | | 1 | A | | 3 |
| Peak collector current | ICM | | | 2 | A | single pulse; tp ≤ 1 ms | 3 |
| Base current | IB | | | 200 | mA | | 3 |
| Peak base current | IBM | | | 300 | mA | single pulse; tp ≤ 1 ms | 3 |
| Total power dissipation (standard footprint) | Ptot | | | 500 | mW | Tamb ≤ 25 °C; FR4 PCB; standard footprint | 3 |
| Total power dissipation (collector pad 1 cm2) | Ptot | | | 800 | mW | Tamb ≤ 25 °C; FR4 PCB; mounting pad for collector 1 cm2 | 3 |
| Total power dissipation (collector pad 6 cm2) | Ptot | | | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB; mounting pad for collector 6 cm2 | 3 |
| Junction temperature | Tj | | | 150 | °C | | 3 |
| Ambient temperature | Tamb | -55 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | | | 250 | K/W | in free air; FR4 PCB; standard footprint | 4 |
| Thermal resistance junction to ambient (collector pad 1 cm2) | Rth(j-a) | | | 157 | K/W | in free air; FR4 PCB; mounting pad for collector 1 cm2 | 4 |
| Thermal resistance junction to ambient (collector pad 6 cm2) | Rth(j-a) | | | 114 | K/W | in free air; FR4 PCB; mounting pad for collector 6 cm2 | 4 |
| Collector-base breakdown voltage | V(BR)CBO | 100 | | | V | IC = 100 µA; IE = 0 A | 5 |
| Collector-emitter breakdown voltage | V(BR)CEO | 80 | | | V | IC = 2 mA; IE = 0 A | 5 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE = 100 µA; IC = 0 A | 5 |
| Collector-base cut-off current | ICBO | | | 100 | nA | VCB = 30 V; IE = 0 A | 5 |
| Collector-base cut-off current | ICBO | | | 10 | μA | VCB = 30 V; IE = 0 A; Tj = 150 °C | 5 |
| Emitter-base cut-off current | IEBO | | | 100 | nA | VEB = 5 V; IC = 0 A | 5 |
| DC current gain | hFE | 63 | | | | VCE = 2 V; IC = 5 mA | 5 |
| DC current gain | hFE | 40 | | | | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| DC current gain BCX56-10T | hFE | 63 | | 160 | | VCE = 2 V; IC = 150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| Collector-emitter saturation voltage | VCEsat | | | 500 | mV | IC = 500 mA; IB = 50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| Base-emitter voltage | VBE | | | 1 | V | VCE = 2 V; IC = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
| Transition frequency | fT | | 155 | | MHz | VCE = 5 V; IC = 50 mA; f = 100 MHz | 5 |
| Collector capacitance | Cc | | 4.5 | | pF | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | 5 |
## CAD (KiCad official)
- Symbol: `BCX56-10TF`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `bcx56-10tf-etched.step` / `bcx56-10tf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx56-10tf.step` / `bcx56-10tf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BCX56-10TF.pdf) (12 pp, sha256 `84b4b88c2fc85dd4`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcx56-10tf-datasheet.pdf)