component
BCX5510TA
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownBCX5510TA
Diodes Incorporated · Bipolar (BJT) · SOT-89
BCX5510TA from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the datasheet drawing shows it as the bottom lead of the top-view pin-out, with IB max 100mA continuous and 200mA peak. |
| 2 | C | passive | Collector, the middle lead, which is also connected to the exposed collector tab; BVCEO 60V, IC 1A continuous and 2A peak for the BCX55 family. |
| 3 | E | passive | Emitter of the NPN transistor; the datasheet drawing shows it as the top lead of the top-view pin-out, with VEBO max 6V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC = 100µA (BCX55) | 4 | ||
| Collector-Emitter Breakdown Voltage (Note 12) | BVCEO | 60 | V | IC = 10mA (BCX55) | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100µA | 4 | ||
| Collector Cutoff Current | ICBO | 0.1 | µA | VCB = 30V | 4 | ||
| Collector Cutoff Current | ICBO | 20 | µA | VCB = 30V, TA = +150°C | 4 | ||
| Emitter Cutoff Current | IEBO | 20 | nA | VEB = 5V | 4 | ||
| Static Forward Current Transfer Ratio (All versions) | hFE | 25 | IC = 5mA, VCE = 2V | 4 | |||
| Static Forward Current Transfer Ratio (All versions) | hFE | 40 | IC = 150mA, VCE = 2V | 4 | |||
| Static Forward Current Transfer Ratio (10 gain group) | hFE | 63 | 160 | IC = 150mA, VCE = 2V | 4 | ||
| Collector-Emitter Saturation Voltage (Note 12) | VCE(sat) | 0.5 | V | IC = 500mA, IB = 50mA | 4 | ||
| Base-Emitter Turn-On Voltage (Note 12) | VBE(on) | 1 | V | IC = 500mA, VCE = 2V | 4 | ||
| Transition Frequency | fT | 150 | MHz | IC = 50mA, VCE = 10V, f = 100MHz | 4 | ||
| Output Capacitance | Cobo | 25 | pF | VCB = 10V, f = 1MHz | 4 | ||
| Collector-Base Voltage (BCX55) | VCBO | 60 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage (BCX55) | VCEO | 60 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 6 | V | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | 1 | A | TA = +25°C | 2 | ||
| Peak Pulse Collector Current | ICM | 2 | A | TA = +25°C | 2 | ||
| Continuous Base Current | IB | 100 | mA | TA = +25°C | 2 | ||
| Peak Pulse Base Current | IBM | 200 | mA | TA = +25°C | 2 | ||
| Power Dissipation | PD | 0.55 | W | Note 5 (minimum recommended pad layout, 1oz copper) | 2 | ||
| Power Dissipation | PD | 1 | W | Note 6 (15mm x 15mm 1oz copper) | 2 | ||
| Power Dissipation | PD | 1.5 | W | Note 7 (25mm x 25mm 1oz copper) | 2 | ||
| Power Dissipation | PD | 2 | W | Note 8 (50mm x 50mm 1oz copper) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 225 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 83 | °C/W | Note 7 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 60 | °C/W | Note 8 | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 13 | °C/W | Note 9 (junction to solder point on exposed collector pad) | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 39 | °C/W | Notes 5 & 10 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 27 | °C/W | Note 10 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A (Note 11) | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C (Note 11) | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Matte Tin Finish Leads. Solderable per MIL-STD-202 Method 208 | 1 |
CAD (KiCad official)
- Symbol:
BCX5510TA - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
bcx5510ta-etched.step/bcx5510ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx5510ta.step/bcx5510ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
f1fb713b16b386bf, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).