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BCX55-10

Public Made by Adom

by adom

Nexperia Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BCX55-10

Nexperia · Bipolar Transistors - BJT · SOT-89

BCX55-10 from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter; the transistor's emitter terminal.
2 C passive Collector; rated for VCEO 60 V and IC 1 A (ICM 2 A single pulse, tp ≤ 1 ms), and connected to the exposed die pad/heatsink for heat transfer.
3 B passive Base; the transistor's base terminal, with IB max 0.3 A and VEBO max 5 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base breakdown voltage V(BR)CBO 60 V IC = 100 µA; IE = 0; Tamb = 25 °C 6
collector-emitter breakdown voltage V(BR)CEO 60 V IC = 2 µA; IB = 0 A; Tamb = 25 °C 6
emitter-base breakdown voltage V(BR)EBO 5 V IC = 0 A; IE = 100 µA 6
collector-base cut-off current ICBO 100 nA VCB = 30 V; IE = 0 A; Tamb = 25 °C 6
collector-base cut-off current ICBO 10 µA VCB = 30 V; IE = 0 A; Tj = 150 °C 6
emitter-base cut-off current IEBO 100 nA VEB = 5 V; IC = 0 A; Tamb = 25 °C 6
DC current gain (BCX55-10) hFE 63 VCE = 2 V; IC = 5 mA; Tamb = 25 °C; pulsed 6
DC current gain (BCX55-10) hFE 63 160 VCE = 2 V; IC = 150 mA; Tamb = 25 °C; pulsed 6
DC current gain (BCX55-10) hFE 40 VCE = 2 V; IC = 500 mA; Tamb = 25 °C; pulsed 6
collector-emitter saturation voltage VCEsat 0.5 V IC = 500 mA; IB = 50 mA; Tamb = 25 °C; pulsed 6
base-emitter voltage VBE 1 V VCE = 2 V; IC = 500 mA; Tamb = 25 °C; pulsed 6
transition frequency fT 100 180 MHz VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 °C 6
collector capacitance Cc 6 pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 °C 6
collector-base voltage VCBO 60 V open emitter 3
collector-emitter voltage VCEO 60 V open base 3
emitter-base voltage VEBO 5 V open collector 3
collector current IC 1 A 3
peak collector current ICM 2 A single pulse; tp ≤ 1 ms 3
base current IB 0.3 A 3
peak base current IBM 0.3 A single pulse; tp ≤ 1 ms 3
total power dissipation Ptot 0.5 W Tamb ≤ 25 °C; FR4 PCB, standard footprint 3
total power dissipation Ptot 0.95 W Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 1 cm2 3
total power dissipation Ptot 1.35 W Tamb ≤ 25 °C; FR4 PCB, mounting pad for collector 6 cm2 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -55 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance junction to ambient Rth(j-a) 250 K/W in free air; FR4 PCB, standard footprint 4
thermal resistance junction to ambient Rth(j-a) 132 K/W in free air; FR4 PCB, mounting pad for collector 1 cm2 4
thermal resistance junction to ambient Rth(j-a) 93 K/W in free air; FR4 PCB, mounting pad for collector 6 cm2 4
thermal resistance junction to solder point Rth(j-sp) 16 K/W 4

CAD (KiCad official)

  • Symbol: BCX55-10
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: bcx55-10-etched.step / bcx55-10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx55-10.step / bcx55-10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (12 pp, sha256 1eeccafc6587c199, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF