component
BCX54-10
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BCX54-10
Changjing · Bipolar (BJT) · SOT-89-3L
BCX54-10 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet limits base current IB to 0.1 A and peak base current IBM to 0.2 A (tp<1ms). |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet limits collector current IC to 1 A and collector power dissipation PC to 500 mW. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet limits emitter-base voltage VEBO to 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (BCX54) | V(BR)CBO | 45 | V | IC=100µA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage (BCX54) | V(BR)CEO | 45 | V | IC=10mA,IB=0 (pulse test) | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10µA,IC=0 | 2 | ||
| Collector cut-off current | ICBO | 0.1 | µA | VCB=30V,IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB=5V,IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 40 | VCE=2V, IC=5mA (pulse test) | 2 | |||
| DC current gain hFE(2) (BCX54 family range; -10 subrange not printed) | hFE(2) | 63 | 250 | VCE=2V, IC=150mA (pulse test) | 2 | ||
| DC current gain hFE(3) | hFE(3) | 25 | VCE=2V, IC=0.5A (pulse test) | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=0.5A,IB=50mA (pulse test) | 2 | ||
| Base-emitter voltage | VBE | 1 | V | VCE=2V, IC=0.5A (pulse test) | 2 | ||
| Collector-base voltage (BCX54) | VCBO | 45 | V | 1 | |||
| Collector-emitter voltage (BCX54) | VCEO | 45 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current | IC | 1 | A | 1 | |||
| Collector power dissipation | PC | 500 | mW | 1 | |||
| Base current | IB | 0.1 | A | 1 | |||
| Peak base current | IBM | 0.2 | A | tp<1ms | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Operation temperature range | Topr | -25 | 125 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
BCX54-10 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
bcx54-10-etched.step/bcx54-10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx54-10.step/bcx54-10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (5 pp, sha256
806bdb1ae53cc6d2, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BCX54-10
**Changjing** · Bipolar (BJT) · SOT-89-3L
BCX54-10 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet limits base current IB to 0.1 A and peak base current IBM to 0.2 A (tp<1ms). |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet limits collector current IC to 1 A and collector power dissipation PC to 500 mW. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet limits emitter-base voltage VEBO to 5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (BCX54) | V(BR)CBO | 45 | | | V | IC=100µA,IE=0 | 2 |
| Collector-emitter breakdown voltage (BCX54) | V(BR)CEO | 45 | | | V | IC=10mA,IB=0 (pulse test) | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 | | | V | IE=10µA,IC=0 | 2 |
| Collector cut-off current | ICBO | | | 0.1 | µA | VCB=30V,IE=0 | 2 |
| Emitter cut-off current | IEBO | | | 0.1 | µA | VEB=5V,IC=0 | 2 |
| DC current gain hFE(1) | hFE(1) | 40 | | | | VCE=2V, IC=5mA (pulse test) | 2 |
| DC current gain hFE(2) (BCX54 family range; -10 subrange not printed) | hFE(2) | 63 | | 250 | | VCE=2V, IC=150mA (pulse test) | 2 |
| DC current gain hFE(3) | hFE(3) | 25 | | | | VCE=2V, IC=0.5A (pulse test) | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC=0.5A,IB=50mA (pulse test) | 2 |
| Base-emitter voltage | VBE | | | 1 | V | VCE=2V, IC=0.5A (pulse test) | 2 |
| Collector-base voltage (BCX54) | VCBO | | | 45 | V | | 1 |
| Collector-emitter voltage (BCX54) | VCEO | | | 45 | V | | 1 |
| Emitter-base voltage | VEBO | | | 5 | V | | 1 |
| Collector current | IC | | | 1 | A | | 1 |
| Collector power dissipation | PC | | | 500 | mW | | 1 |
| Base current | IB | | | 0.1 | A | | 1 |
| Peak base current | IBM | | | 0.2 | A | tp<1ms | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Operation temperature range | Topr | -25 | | 125 | ℃ | | 1 |
| Thermal resistance from junction to ambient | RθJA | | 250 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `BCX54-10`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files: `bcx54-10-etched.step` / `bcx54-10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcx54-10.step` / `bcx54-10.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603047282044919808) (5 pp, sha256 `806bdb1ae53cc6d2`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bcx54-10-datasheet.pdf)