component
BCX53TF
Public Made by Adomby adom
Nexperia Bipolar Transistors - BJT, SOT-89-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| bcx53tf-etched.glb | 8d ago |
| bcx53tf-etched.step | 8d ago |
| bcx53tf-hero.glb | 8d ago |
| bcx53tf-hero.overlay.json | 8d ago |
| bcx53tf.glb | 8d ago |
| bcx53tf.kicad_mod | 8d ago |
| bcx53tf.kicad_sym | 8d ago |
| bcx53tf.lbr | 8d ago |
| bcx53tf.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
BCX53TF
Nexperia · Bipolar Transistors - BJT · SOT-89-3
BCX53TF from Nexperia, in a SOT-89-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter of the PNP transistor; the device limits apply, with emitter-base voltage VEBO of -5 V and collector current IC of -1 A (Table 6, page 3). |
| 2 | C | passive | Collector of the PNP transistor; limited to collector-emitter voltage VCEO of -80 V, collector current IC of -1 A and peak collector current ICM of -2 A for tp ≤ 1 ms (Table 6, page 3). |
| 3 | B | passive | Base of the PNP transistor; limited to base current IB of -200 mA and peak base current IBM of -300 mA for tp ≤ 1 ms (Table 6, page 3). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-89-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | -100 | V | open emitter | 3 | ||
| Collector-emitter voltage | VCEO | -80 | V | open base | 3 | ||
| Emitter-base voltage | VEBO | -5 | V | open collector | 3 | ||
| Collector current | IC | -1 | A | 3 | |||
| Peak collector current | ICM | -2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| Base current | IB | -200 | mA | 3 | |||
| Peak base current | IBM | -300 | mA | single pulse; tp ≤ 1 ms | 3 | ||
| Total power dissipation (standard footprint) | Ptot | 500 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, standard footprint [1] | 3 | ||
| Total power dissipation (1 cm² collector pad) | Ptot | 800 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, mounting pad for collector 1 cm² [2] | 3 | ||
| Total power dissipation (6 cm² collector pad) | Ptot | 1100 | mW | Tamb ≤ 25 °C; FR4 PCB, single-sided copper, mounting pad for collector 6 cm² [3] | 3 | ||
| Junction temperature | Tj | 150 | °C | 3 | |||
| Ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Thermal resistance junction to ambient (standard footprint) | Rth(j-a) | 250 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, standard footprint [1] | 4 | ||
| Thermal resistance junction to ambient (1 cm² collector pad) | Rth(j-a) | 157 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm² [2] | 4 | ||
| Thermal resistance junction to ambient (6 cm² collector pad) | Rth(j-a) | 114 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm² [3] | 4 | ||
| Collector-base breakdown voltage | V(BR)CBO | -100 | V | IC = -100 µA; IE = 0 A | 5 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC = -2 mA; IE = 0 A | 5 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE = -100 µA; IC = 0 A | 5 | ||
| Collector-base cut-off current | ICBO | -100 | nA | VCB = -30 V; IE = 0 A | 5 | ||
| Collector-base cut-off current (Tj = 150 °C) | ICBO | -10 | μA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 5 | ||
| Emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A | 5 | ||
| DC current gain | hFE | 63 | VCE = -2 V; IC = -5 mA | 5 | |||
| DC current gain | hFE | 40 | VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | |||
| DC current gain (BCX53T) | hFE | 63 | 250 | VCE = -2 V; IC = -150 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Collector-emitter saturation voltage | VCEsat | -500 | mV | IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 | ||
| Base-emitter voltage | VBE | -1 | V | VCE = -2 V; IC = -500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.02 | 5 |
CAD (KiCad official)
- Symbol:
BCX53TF - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3 (KiCad packages3D, STEP)
- 3D model files:
bcx53tf-etched.step/bcx53tf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx53tf.step/bcx53tf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (12 pp, sha256
9c6cf9f950e68b4c, retrieved 2026-10-29, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).